Poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is widely used as a hole transport layer in inverted perovskite solar cells (PSCs) due to its simple fabrication process and high stability. However, there are severe interface defects between PEDOT:PSS and the perovskite layer, such as low hole transfer mobility and charge transfer capability, leading to poor power conversion efficiency (PCE) of the inverted devices. In this study, KBF4‐doped hole transport layer (PEDOT:PSS) was introduced. The aqueous solution of KBF4 diluted with PEDOT:PSS was cleverly utilized to compare with PEDOT:PSS diluted with deionized aqueous solution. The deionized water diluted PEDOT:PSS can form a thinner film compared to PEDOT:PSS, which can greatly enhance the open‐circuit voltage (Voc) and PCE of the device. On this basis, KBF4 was doped into it, which further enhanced the performance of the device. X‐ray photoelectron spectroscopy (XPS) of PEDOT:PSS confirmed the reduction of PSS chains and an increase in conductivity after KBF4 doping. Moreover, KBF4 doping promoted crystal growth, resulting in larger grain size of the perovskite film. Additionally, the defects at the PEDOT:PSS/perovskite interface were effectively passivated, suppressing non‐radiative recombination. The results showed improved short‐circuit current density (Jsc) and fill factor (FF), resulting in a PCE of 19.76%, which is a 17.9% enhancement compared to the original device’s 16.75%. The optimized device also exhibited long‐term stability exceeding 1000 hours, providing a simple and effective strategy for improving the PCE and stability of inverted PSCs, which is beneficial for future scalability.This article is protected by copyright. All rights reserved.