Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors

Aresu, Stefano; Kanert, Werner; Pufall, Reinhard; Goroll, Michael

doi:10.1016/j.microrel.2007.07.021

Cited by 10 publications

(8 citation statements)

References 4 publications

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“…The NBTI mechanisms are bias dependent and thermally activated [19]- [27], [31]- [34], and all devices used in the NBT-RAD experiment follow the same degradation curve during initial NBT stress. Threshold voltage shifts higher than 0.3 V could have been achieved during the NBT stress by applying higher stress voltage and/or temperature, as well as by extending the duration of the NBT stress, as the processes remain active for thousands of hours [20].…”

Section: Resultsmentioning

confidence: 99%

“…Although some may argue that n-channel power MOS transistors are less sensitive to NBTI, some studies suggested their serious NBTI degradation [21], [27], so this approach of investigation of simultaneous irradiation and NBT stress effects could be interesting and important for these devices as well.…”

Section: Resultsmentioning

confidence: 99%

“…It has been shown that NBT stress may cause the degradation of several important electrical parameters of power VDMOSFETs, and among them, the negative threshold voltage shift due to the build-up of oxide-trapped charge and interface traps represents the most critical reliability problem [25]. Note that the negative threshold voltage shift is more pronounced at NBT stresses under the higher temperatures and/or higher gate voltages, that is, higher oxide electric fields [19]- [27], [31]- [34].…”

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confidence: 99%

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NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors

Davidović

Danković

Ilić

et al. 2016

IEEE Trans. Nucl. Sci.

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In this paper, we report the results of consecutive irradiation and negative bias temperature (NBT) stress experiments performed on p-channel power vertical double-diffused metal-oxide semiconductor transistors. The purpose is to examine the effects of a specific kind of stress in devices previously subjected to the other kind of stress, as well as to assess if possible the behavior of devices subjected to simultaneous irradiation and NBT stressing. It is shown that irradiation of previously NBT stressed devices leads to a further increase of negative threshold voltage shift due to additional build-up of both oxide trapped charge and interface traps. NBT stress effects in previously irradiated devices may, however, depend on gate bias applied during irradiation and on the total dose received: in the cases of low-dose irradiation or irradiation without gate bias, the subsequent NBT stress seems to lead to further device degradation, whereas in the cases of devices previously irradiated to high doses or with gate bias applied during irradiation, NBT stress seems to have a positive role since it practically anneals a part of radiation-induced degradation.Index Terms-Interface traps, irradiation effects, negative bias temperature instability (NBTI), oxide traps, power devices, thermal annealing, threshold voltage shift, VDMOSFET.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors

Davidović

Danković

Ilić

et al. 2016

IEEE Trans. Nucl. Sci.

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“…Although NBTI phenomenon is known for more than a half of the century, the reliability issues associated with NBTI have resurfaced in the past two decades due to convergence of several factors resulting from the device scaling. This is the reason that vast majority of recent extensive investigation of NBTI has been focused on the related phenomena in ultrathin gate dielectrics layers, and only few research groups seem to have addressed the NBTI in thick gate oxides [24,29,30]. However, in spite of device dimensions being generally scaled down, there is still high interest in ultra-thick oxides owing to widespread use of MOS technology for the realization of power devices, so the investigation of NBTI in VDMOSFETs is of high interest.…”

Section: Development Of Advanced Electronic Industry Is Based On Combmentioning

confidence: 99%

“…Mechanisms responsible for NBT stress induced changes of N ot and N it are bias dependent and thermally activated [9,16,20,23,24,[26][27][28][29]. Interpretations of mechanisms responsible for degradation, very often, include various forms of model based on the assumption that previously passivated defects at SiO 2 -Si interface release hydrogen species which diffuse into the oxide and leave the interface traps [17,19,53,61].…”

Section: Consecutive Radiation and Nbt Stress Effectsmentioning

confidence: 99%

NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs

et al. 2018

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In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.

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