Exceptional Responsivity (>6 kA/W) and Dark Current (<70 fA) Tradeoff of n-Ga₂O₃/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

“…[207] The subsequent vertical PD fabricated with these heterostructures show a responsivity of 94.3 A W −1 and specific detectivity of 3.09 × 10 12 Jones at 250 nm and −5 V bias. Kumar et al in their work [208] on n-Ga 2 O 3 /p-CuO quasi-heterojunction based MSM PD boast of an ultrahigh responsivity of 6.33 × 10 3 A W −1 and an ultralow dark current of 6.94 fA. They attribute the low dark current to the enhanced depletion width at p-n heterojunction and the Pt/Ga 2 O 3 metal-semiconductor interface, providing a narrow path to the travel of the free carriers to go from one electrode to the other, under dark conditions.…”

Interfacial Engineering of SnS/Ga2O3 Heterojunction by SnO for a High‐Performance Self‐Powered Solar‐Blind UV Photodetector

“…The dark currents are as low as 42 fA at 0 V bias and 86 fA at 5 V bias, suggesting that the foundation of heterojunction provides a narrow channel for free carriers to transfer from one metal electrode to another without UV irradiation. [ 40 ] With the illumination of 254 nm UV light (170 µW cm −2 ), the photocurrents proliferate to 0.16 nA at 0 V bias and 2.32 nA at 5 V bias, resulting in a high I photo / I dark ratio of 3.81 × 10 3 at 0 V bias and 2.70 × 10 4 at 5 V bias due to the wider depletion width. [ 40 ] The responsivity (R) is an important index of a photodetector, calculated by the formula: [ 1 ] $$\[ \begin{array}{*{20}{c}}{{\rm{R}} = ({I_{{\rm{photo}}}} - {I_{{\rm{dark}}}})/{\rm{PS}}}\end{array} \]$$where P represents the light power intensity, and S represents the effective irradiation area.…”

Tailoring of structural and optical properties of electrosprayed β-Ga2O3 nanostructures via self-assembly

“…Samples were annealed at 300°C, 500°C, and 700°C for 2 hours each as shown in Figure 1. Annealing is a continuous and sequential process that helps to adjust the thickness of the flakes also [15,16]. The SAT and annealing details of the three categories of samples are summarized in Table 1.…”

“…Various methods to deposit the β-Ga2O3 thin film or nanostructures (NSs) have already been reported according to their practical applications in different areas [7][8][9][10]. Micro-flakes [11], nanosheets [12], nano-webs [13], and NSs [14][15][16][17][18] have been fabricated and implemented for different devices. Apart from the various conventional growth techniques, self-assembly has also been proven to be one of the inexpensive growth techniques for the synthesis of β-Ga2O3 NSs [16][17][18].…”