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We discuss the potential of heterogenous integration of Ga2O3 with diamond for enabling energy-efficient kV-class power devices. The integration alleviates Ga2O3 material drawbacks such as its low thermal conductivity and inefficient hole conductivity. The benefits of heterogeneous integration are demonstrated through electrical and thermal simulations of a Ga2O3-Al2O3-diamond superjunction based Schottky barrier diode. The simulation studies show that the novel device has potential to break the RON-breakdown voltage limit of Ga2O3, while showing relatively low rise in temperature compared to conventional devices. First steps for the actual materials integration are taken with the epitaxial growth of Ga2O3 on single crystal diamond substrates.