Excess Avalanche Noise in $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$

Impact Ionization in InAs Electron Avalanche Photodiodes

“…6. Comparison between the Me measured in this paper on P3 diodes (•) and multiplication characteristics measured on other materials, including HgCdTe, with cutoff wavelengths of 4.2-µm (solid back line) and 2.2-µm (dashed black line) [5] and InAlAs (dot-dashed line) [22].…”

Avalanche Photodiodes in High-Speed Receiver Systems

“…The non-local impact ionisation coefficients and threshold energies of Tan et al (2008) for InP and Goh et al (2007a) for InAlAs are used due to the extensive electric field range over which they are valid. The un-multiplied tunnelling current (Forrest et al, 1980b) defined by Equation (34) will use reported experimental InP (Tan et al, 2008) and InAlAs (Goh et al, 2007b) tunnelling fitting parameters.…”

The InAs Electron Avalanche Photodiode

“…M e = exp(w) (4) Figure 5 compares the multiplication characteristics of some e-APDs with that of an InAlAs APD (Goh et al, 2007), representative of conventional APDs. The multiplication factor minus one scale is used because it allows both the low and high gain characteristics to be presented clearly.…”

“…In contrast multiplication is discernable in the e-APDs from lower voltages, in some cases less than 1V and it rises much more progressively with increasing bias voltage. On the logarithmic scale the rise in multiplication is approximately (Marshall et al, 2010), Hg x-1 Cd x Te diodes with cut-off wavelengths of 4.2µm ( ) and 2.2µm (▲) (Beck et al, 2006), and an InAlAs diode ( ) (Goh et al, 2007). (Marshall et al, 2010) and an InAlAs diode ( ) (Goh et al, 2007), plotted against the electric field in the multiplication region.…”

“…Multiplication factor A comparison between the F e reported on APDs of different materials including, InAs diodes with a 3.5μm intrinsic width and radii of 50μm ( ) and 100μm ( ) (Marshall et al, 2009), Hg x-1 Cd x Te diodes with cut-off wavelengths of 4.2µm ( ) and 2.2µm (▲) (Beck et al, 2006), and an InAlAs diode ( ) (Goh et al, 2007).…”