Excess Tunnel Current in Silicon Esaki Junctions

Chynoweth, A. G.; Feldmann, W. L.; Logan, R. A.

doi:10.1103/physrev.121.684

Cited by 331 publications

(129 citation statements)

References 11 publications

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“…5c. This behavior is characteristic of a tunnel diode [33][34][35][36][37][38][39][40][41] and is consistent with degenerative doping and the introduction of donor states below the conduction band minimum.…”

Section: Phosphorus-doped B 5 C Inmentioning

confidence: 49%

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

McIlroy

Hwang

Yang

et al. 1998

Applied Physics A: Materials Science & Processing

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Section: Phosphorus-doped B 5 C Inmentioning

confidence: 49%

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

McIlroy

Hwang

Yang

et al. 1998

Applied Physics A: Materials Science & Processing

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“…3(c). There the current through the Esaki diode is dominated by the excess current [34], a result of multistep tunneling through impurity-related band gap states in the highly disordered (Ga,Mn)As. Direct tunneling between the (Ga,Mn)As VB and the n-GaAs conduction band (CB), dominating for negative and low positive bias, is suppressed as the overlap of the bands is lifted.…”

mentioning

confidence: 99%

Electrical Spin Injection into High Mobility 2D Systems

et al. 2014

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We report on spin injection into a high mobility 2D electron system confined at an ðAl; GaÞAs=GaAs interface, using (Ga,Mn)As Esaki diode contacts as spin aligners. We measured a clear nonlocal spin valve signal, which varies nonmonotonically with the applied bias voltage. The magnitude of the signal cannot be described by the standard spin drift-diffusion model, because at maximum this would require the spin polarization of the injected current to be much larger than 100%, which is unphysical. A strong correlation of the spin signal with contact width and electron mean free path suggests that ballistic transport in the 2D region below ferromagnetic contacts should be taken into account to fully describe the results. DOI: 10.1103/PhysRevLett.113.236602 PACS numbers: 72.25.Dc, 72.25.Hg, 72.25.Mk, 73.40.Kp All-electrical spin injection and detection, one of the key ingredients for functional spintronics devices, has been successfully realized in bulk semiconductors like GaAs [1,2] and Si [3,4]. To implement the spin-transistor functionality, proposed by Datta and Das [5], one needs the capacity to controllably rotate the spin of electrons on the way from source to drain. It has been suggested [5] to employ Rashba spin-orbit interaction, due to which the k vector of an electron in a two-dimensional electron gas (2DEG) is connected to an effective magnetic field, which is in turn tunable by an electric field. Thus, the precession angle in a sufficiently narrow channel can be coherently controlled by a gate voltage, provided transport between source and drain is ballistic. Hence, high mobility 2D systems are needed for these experiments. Although spin injection into graphene, a truly 2D system, has already been realized [6,7], no experiments exist in the ballistic regime where the injector or detector widths or their separation is significantly smaller than the electron mean free path l mf . Spin injection into semiconductor-based 2DEGs turns out to be difficult and only a few reports are available [8][9][10][11]. The analysis of experiments is also complicated by the lack of a corresponding ballistic theory. Although different aspects of ballistic spin injection and spin transport have been discussed theoretically [12][13][14][15][16][17], there is no comprehensive theory that would allow us to describe the experimental outcome in this regime in a way in which the spin drift-diffusion theory describes experiments on devices with bulk 3D channels [1,2].In this Letter we provide clear evidence of spin injection into a high mobility 2DEG confined in an inverted ðAl; GaÞAs=GaAs heterojunction, employing the ferromagnetic (FM) semiconductor (Ga,Mn)As in an Esaki diode configuration [18-21] as a spin aligner. We observed a dramatically enhanced nonlocal spin valve (NLSV) signal at negatively biased Esaki junctions when electrons can tunnel directly from (Ga,Mn)As into 2DEG states. At maximum the amplitude of the signal is much larger than predicted by the standard spin drift-diffusion model. The signal is especially l...

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“…On the other hand, SRH and TAT have an exponential increase at high temperatures because they are thermally activated mechanisms. Equations (2) and (3) present the model for the current density of TAT and SRH, respectively [35][36][37]. As SRH and TAT are exponentially influenced by the temperature and they determine I OFF , I OFF has a higher relative temperature variation compared with I ON , as can be observed in figure 6.…”

Section: Introductionmentioning

confidence: 82%

The impact of the temperature on In0.53Ga0.47As nTFETs

Bordallo¹,

Martino²,

Agopian³

et al. 2018

CompoNano

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ABSTRACT. In this paper, a comparative study between the use of spin on glass and gas phase Zn diffusion of the p++ source of InGaAs TFETs was performed. The use of Zn gas phase doping at the source reduces the tunneling length which results in an enhancement of ION, higher transistor efficiency and intrinsic voltage gain at lower voltages. The main parameters of gas-phased-diffused In0.53Ga0.47As nTFETs with gate stacks composed by 3 nm or 2 nm HfO2 on top of 1 nm Al2O3 have been analyzed. The resulting equivalent oxide thickness (EOT) was about 0.8 nm and 1.0 nm, respectively. The lower EOT improves the electrostatic coupling, resulting in a lower SS (sub 60 mV/dec at room temperature) leading to a higher gm/IDS in weak conduction. TCAD simulations have shown that the ambipolar effect is significant for higher VDS, degrading SS and consequently gm/IDS in the weak conduction regime, also shifting the gm/IDS peak to higher VGS direction due to the increase of IOFF. The AV peak is strongly degraded by an increase of the temperature due to the increase of the trap-assisted-tunneling (TAT) and Shockley-Read-Hall (SRH) generation mechanisms. For higher VGS the AV is lower, and at the same time less sensitive to temperature variations, which is a favorable regime for temperature-dependent analog operation.

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Excess Tunnel Current in Silicon Esaki Junctions

Cited by 331 publications

References 11 publications

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

Electrical Spin Injection into High Mobility 2D Systems

The impact of the temperature on In0.53Ga0.47As nTFETs

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