Exchange Bias Coupling and Bipolar Resistive Switching at Room Temperature on GaSb/Mn Multilayers for Resistive Memories Applications

Abstract

This work present structural, morphological, magnetic, and electrical properties of GaSb/Mn multilayer deposited via DC magnetron sputtering at room temperature and at 423 K. The samples are characterized by forming layers of 3, 6 and 12 periods of the GaSb/Mn structure. Through XRD patterns, it was possible to stablish the formation of GaSb, Mn3Ga, and Mn2Sb2 phases. FTIR measurements present an optical interference associated with periodicity and the homogenous thickness of the layers. HR-SEM shows the multilayer architecture with columnar microstructure in the formation of layers with grain nucleation on the surface. A ferromagnetic-like behavior was observed in the multilayers at room temperature related to the domains and interlayers interaction. Additionally, the hysteresis curves present shifts attributed to the effect of exchange bias coupling. I-V curves show RESET-SET states of the multilayer system with bipolar resistive behavior, which can be modified by external magnetic fields. The resistive switching evidenced corresponds to the conductive mechanism based on the capacitive conductance and the formation of conductive filaments in multilayer structure.

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

“…30,31 The next-generation memory devices must be superfast, nonvolatile, and high-density to meet the growing demand of consumer and industrial applications. There are different types of memory devices reposted in the literature such as resistive RAM (RRAM), 32,33 magnetoresistive RAM (MRAM), 34,35 phase-change RAM (PCRAM), 36 etc. For instance, a ferroelectric tunnel junction (FTJ) based nonvolatile memory device exhibits a unique benefit.…”