2014
DOI: 10.1063/1.4900747
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Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

Abstract: Iron oxide films were produced using ion-beam-assisted deposition, and Raman spectroscopy and x-ray diffraction indicate single-phase magnetite. However, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite, suggesting greater than normal disorder. Low temperature magnetometry and first-order reversal curve measurements show strong exchange bias, which likely arises from defects at grain … Show more

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Cited by 5 publications
(2 citation statements)
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“…Though the cause of this large coercivity increase is not clear, some speculations can be made to direct future work. Having multiple phases, including ferrimagnetic spinel(s) and antiferromagnetic NiO, could cause interfacial effects leading to exchange bias and increased coercivity. It has been seen that exchange bias can be caused by interface phases at grain boundaries or different collinear–​noncollinear spin interfaces as well. No exchange bias was observed in our experiments even though the low-temperature hysteresis curves were taken after field cooling in 500 Oe.…”
Section: Discussionmentioning
confidence: 78%
“…Though the cause of this large coercivity increase is not clear, some speculations can be made to direct future work. Having multiple phases, including ferrimagnetic spinel(s) and antiferromagnetic NiO, could cause interfacial effects leading to exchange bias and increased coercivity. It has been seen that exchange bias can be caused by interface phases at grain boundaries or different collinear–​noncollinear spin interfaces as well. No exchange bias was observed in our experiments even though the low-temperature hysteresis curves were taken after field cooling in 500 Oe.…”
Section: Discussionmentioning
confidence: 78%
“…The IBAD method is combined with physical vapor deposition (PVD) and independent ion beam bombardment. Thus, this method is typically used to independently control film's composition and structure and so on [13]. Especially, during the IBAD deposition process, the slow rate of deposition makes the atoms have enough time to rearrange on the surface, and the CoSiB system can explore more stable configurations before buried by the upcoming atoms.…”
mentioning
confidence: 99%