2016
DOI: 10.3390/s16071030
|View full text |Cite
|
Sign up to set email alerts
|

Exchange Bias Tuning for Magnetoresistive Sensors by Inclusion of Non-Magnetic Impurities

Abstract: Abstract:The fine control of the exchange coupling strength and blocking temperature ofexchange bias systems is an important requirement for the development of magnetoresistive sensors with two pinned electrodes. In this paper, we successfully tune these parameters in top-and bottom-pinned systems, comprising 5 nm thick Co 40 Fe 40 B 20 and 6.5 nm thick Ir 22 Mn 78 films. By inserting Ru impurities at different concentrations in the Ir 22 Mn 78 layer, blocking temperatures ranging from 220˝C to 100˝C and excha… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
18
0

Year Published

2017
2017
2022
2022

Publication Types

Select...
7
1

Relationship

4
4

Authors

Journals

citations
Cited by 28 publications
(18 citation statements)
references
References 43 publications
0
18
0
Order By: Relevance
“…Co 40 Fe 40 B 20 45 nm/Ru 0.6 nm/Co 40 Fe 40 B 20 45 nm/Ir 22 Mn 78 10 nm/Ru 2 nm stacks were deposited on 200 nm thick Si 3 N 4 membranes by direct current magnetron sputtering using an AJA Orion8 system with a base pressure below 1 × 10 −8 Torr, using conditions similar to ref. . During the deposition, a 30 mT magnetic field was applied in the sample plane for setting the exchange bias direction in the as‐grown sample.…”
Section: Methodsmentioning
confidence: 99%
“…Co 40 Fe 40 B 20 45 nm/Ru 0.6 nm/Co 40 Fe 40 B 20 45 nm/Ir 22 Mn 78 10 nm/Ru 2 nm stacks were deposited on 200 nm thick Si 3 N 4 membranes by direct current magnetron sputtering using an AJA Orion8 system with a base pressure below 1 × 10 −8 Torr, using conditions similar to ref. . During the deposition, a 30 mT magnetic field was applied in the sample plane for setting the exchange bias direction in the as‐grown sample.…”
Section: Methodsmentioning
confidence: 99%
“…The sensor stacks consist of a CoFeB/MgO/CoFeB MTJ, where the magnetization of the bottom layer is pinned by a synthetic antiferromagnet [29]. The multilayers were grown on Si/SiO2 substrates by magnetron sputtering in an AJA Orion8 system with a base pressure of 2•10 -9 Torr and an applied magnetic field of 300 Oe [21,30].…”
Section: Sensor Definitionmentioning
confidence: 99%
“…Some of the features that makes SAFs extremely interesting for applications is their wide applicability to in-plane as well out-of-plane magnetized materials, their large tunability via layer thickness and material composition, and the possibility to combine SAF and exchange bias by adding an antiferromagnetic layer to the stack. Throughout the years, SAFs were successfully used in spin-valves [4,5] and magnetic tunnel junctions [6][7][8][9] as reference layers, with applications as read heads in magnetoresistive [10,11] hard drives [12], magnetic random access memories (MRAM) [13][14][15], microwave oscillators [16] and magnetic biosensors [17][18][19][20][21][22]. More recently, SAFs have been proposed as base materials for racetrack memories [23], due to the higher domain wall velocity with respect to single ferromagnetic layers [24], and their capability to host a range of topological spin-textures [25].…”
Section: Introductionmentioning
confidence: 99%