Exchange coupling and GMR properties in ion beam sputtered hematite spin-valves

Controlling the exchange interaction using the spin-flip transition of antiferromagnetic spins inNi81Fe19∕α‐Fe2O3Dho1, Leung2, Barber3 et al. 2005Phys. Rev. B241190View full textAdd to dashboardCite

“…Hematite α-Fe 2 O 3 is potentially attractive for exchange biased applications because of its high Neel temperature (∼680 0 C) [19,20]. In this Letter, we report exchange bias and coercivity in FM layers coupled with epitaxial X-ray diffraction (XRD) measurements showed that all three α-Fe 2 O 3 growth directions yielded films with excellent crystallinity: a full width half maximum of < 0.08 0 and ∼0.9 0 in the rocking curve and in the φ scan, respectively.…”

Deposition of epitaxial α-Fe2O3 layers for exchange bias studies by reactive dc magnetron sputtering

“…The major problem with using polycrystalline haematite pinning layers lies with the rather low values of exchange bias that have been reported thus far (Hempstead et al 1978, Layadi et al 1987, Hasegawa et al 1996, Sano et al 1998. Maximum values seem to lie in the range 6±40 Oe (for a ferromagnetic ®lm thickness of about 100 A Ê ) equivalent to about 0:01±0.04 erg cm 2 .…”

“…The important point here is that the low values of exchange anisotropy energy have been reported for polycrystalline thin ®lms (Hempstead et al 1978, Layadi et al 1987, Hasegawa et al 1996, Fujikata et al 1998, Sano et al 1998) which may not be single phase or have a bulk-like crystal structure (Sano et al 1998). Note that polycrystallinity will inevitably result in a situation where some spins lie normal to (or at an angle to) the interfacial plane, an e ect which is known to reduce exchange bias .…”

Recent Developments of Magnetoresistive Sensors for Industrial Applications

“…As for the production process, a wide range of technologies has been used to deposit the necessary layers, e.g., evaporation [ 22 , 23 , 24 ], dc and rf sputter deposition [ 25 , 26 , 27 , 28 ], ion beam sputtering [ 29 , 30 , 31 ] and molecular beam epitaxy (MBE) [ 32 , 33 , 34 ]. Important design parameters are among others the film thickness of each individual layer, the interface sharpness, crystallinity, grain size and other material properties describing the magnetic, thermal and mechanical behavior (e.g., coercivity, Curie temperature, Néel temperature, film stress, magnetostriction, etc.…”