Exchange enhancement of the g factor in InAs/AlSb heterostructures

Aleshkin, V. Ya.; Гавриленко, В. И.; Иконников, А. В.; Криштопенко, С. С.; Sadofyev, Yu. G.; Spirin, K. E.

doi:10.1134/s1063782608070129

Cited by 35 publications

(38 citation statements)

References 14 publications

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“…Previously, we have employed this approximation for a quantitative interpretation of our previous experimental results on CR (Refs. 25 and 33) and magnetotransport [39][40][41][42] in InAs/AlSb QWs as well. Moreover, it can be shown that our approximation for the single-electron states can be reduced to the model proposed by Pfeffer and Zawadzki 43 for the spin splitting in the conduction band in n-type QWs based on narrow-gap materials.…”

Section: A Single-electron Statesmentioning

confidence: 87%

“…To prevent the interference effects, the substrates of sample structures were wedged with an angle of 2 . Pronounced effect of negative persistent photoconductivity attributed to GaSb cap layer, 31,[39][40][41] allows one to tune electron concentration by using blue LED illumination. In order control a 2DEG concentration in CR experiments, magnetoresistance was measured as well.…”

Section: Methodsmentioning

confidence: 99%

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Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

Криштопенко

Иконников

Орлита

et al. 2015

Journal of Applied Physics

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We report observation of electron-electron (e-e) interaction effect on cyclotron resonance (CR) in InAs/AlSb quantum well heterostructures. High mobility values allow us to observe strongly pronounced triple splitting of CR line at noninteger filling factors of Landau levels. At magnetic fields, corresponding to > 4, experimental values of CR energies are in good agreement with single-electron calculations on the basis of eight-band k Á p Hamiltonian. In the range of filling factors 3 < < 4 pronounced, splitting of CR line, exceeding significantly the difference in single-electron CR energies, is discovered. The strength of the splitting increases when occupation of the partially filled Landau level tends to a half, being in qualitative agreement with previous prediction by MacDonald and Kallin [Phys. Rev. B 40, 5795 (1989)]. We demonstrate that such behaviour of CR modes can be quantitatively described if one takes into account both electron correlations and the mixing between conduction and valence bands in the calculations of matrix elements of e-e interaction. V

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Section: A Single-electron Statesmentioning

confidence: 87%

Section: Methodsmentioning

confidence: 99%

Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

Криштопенко

Иконников

Орлита

et al. 2015

Journal of Applied Physics

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“…[46] for InAs and Ref. [47] for InSb) and are known to have a large spin-orbit interaction strength α as well as large Lande g-factor (g InAs ∼ 10 − 25 [48] and g InSb ∼ 20 − 70 [47]). Furthermore, these materials are known to form interfaces that are highly transparent for electrons, allowing one to induce a large superconducting gap ∆ [49][50][51].…”

Section: Introductionmentioning

confidence: 99%

Majorana fermions in semiconductor nanowires

2011

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We study multiband semiconducting nanowires proximity-coupled with an s-wave superconductor and calculate the topological phase diagram as a function of the chemical potential and magnetic field. The non-trivial topological state corresponds to a superconducting phase supporting an odd number of pairs of Majorana modes localized at the ends of the wire, whereas the non-topological state corresponds to a superconducting phase with no Majoranas or with an even number of pairs of Majorana modes. Our key finding is that multiband occupancy not only lifts the stringent constraint of one-dimensionality, but also allows having higher carrier density in the nanowire. Consequently, multiband nanowires are better-suited for stabilizing the topological superconducting phase and for observing the Majorana physics. We present a detailed study of the parameter space for multiband semiconductor nanowires focusing on understanding the key experimental conditions required for the realization and detection of Majorana fermions in solid-state systems. We include various sources of disorder and characterize their effects on the stability of the topological phase. Finally, we calculate the local density of states as well as the differential tunneling conductance as functions of external parameters and predict the experimental signatures that would establish the existence of emergent Majorana zero-energy modes in solid-state systems.

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“…Consequently, previously blocked transitions between the triplet and singlet states are enabled leading to a lifting of the PSB. Note that different g-tensors are caused by different constitutions of the two dots in a DQD due to site-dependent confinement, strain or material composition [22][23][24][25][26][27]. While these differences are expected to occur in any realistic DQD system due to unavoidable imperfections in quantum dot growth or engineering, we expect the difference in the g tensors to be particularly noticeable in materials with a strong SOI.…”

Section: Introductionmentioning

confidence: 97%

g-tensor resonance in double quantum dots with site-dependent g-tensors

Mutter¹,

Burkard²

2020

Preprint

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Pauli spin blockade (PSB) has long been an important tool for spin read-out in double quantum dot (DQD) systems with interdot tunneling t. In this paper we show that the blockade is lifted if the two dots experience distinct effective magnetic fields caused by site-dependent g-tensors gL and gR for the left and right dot, and that this effect can be more pronounced than the leakage current due to the spin-orbit interaction (SOI) via spin-flip tunneling and the hyperfine interaction (HFI) of the electron spin with the host nuclear spins. Using analytical results obtained in special parameter regimes, we show that information about both the out-of-plane and in-plane g-factors of the dots can be inferred from characteristic features of the magneto-transport curve. For a symmetric DQD, we predict a pronounced maximum in the leakage current at the characteristic out-of-plane magnetic field B * = t/µB g L z g R z which we term the g-tensor resonance of the system. Moreover, we extend the results to contain the effects of strong SOI and argue that in this more general case the leakage current carries information about the g-tensor components and SOI of the system.

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Exchange enhancement of the g factor in InAs/AlSb heterostructures

Cited by 35 publications

References 14 publications

Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

Majorana fermions in semiconductor nanowires

g-tensor resonance in double quantum dots with site-dependent g-tensors

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