Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide

Hishida, Yuji; Watanabe, M.; Nakashima, Kouichi; Eryu, Osamu

doi:10.4028/www.scientific.net/msf.338-342.873

Cited by 17 publications

(8 citation statements)

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“…Several attempts at activation of ion-implanted dopant in SiC by laser annealing have been reported in the last decades, typically using pulsed excimer lasers [ 104 , 105 , 106 , 107 , 108 ]. However, common to these works was the difficulty to recover the crystalline structure of the material.…”

Section: Non-conventional Annealing and Doping Methodsmentioning

confidence: 99%

Selective Doping in Silicon Carbide Power Devices

et al. 2021

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Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. This paper concisely reviews the main selective doping techniques for SiC power devices technology. In particular, due to the low diffusivity of the main impurities in SiC, ion implantation is the method of choice to achieve selective doping of the material. Hence, most of this work is dedicated to illustrating the main features of n-type and p-type ion-implantation doping of SiC and discussing the related issues. As an example, one of the main features of implantation doping is the need for post-implantation annealing processes at high temperatures (above 1500 °C) for electrical activation, thus having a notable morphological and structural impact on the material and, hence, on some device parameters. In this respect, some specific examples elucidating the relevant implications on devices’ performances are reported in the paper. Finally, a short overview of recently developed non-conventional doping and annealing techniques is also provided, although these techniques are still far from being applied in large-scale devices’ manufacturing.

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Section: Non-conventional Annealing and Doping Methodsmentioning

confidence: 99%

Selective Doping in Silicon Carbide Power Devices

et al. 2021

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“…A subject of ongoing discussion is whether laser-induced recrystallization occurs through solid-state [93][94][95] or liquid-phase recrystallization [93,94,[96][97][98][99][100]. Different effects have been reported by different research groups using the same type of laser.…”

Section: Silicon Carbide Laser Annealingmentioning

confidence: 99%

Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review

Arduino,

Stassi,

Spano

et al. 2023

Materials

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Modifying material properties within a specific spatial region is a pivotal stage in the fabrication of microelectronic devices. Laser annealing emerges as a compelling technology, offering precise control over the crystalline structure of semiconductor materials and facilitating the activation of doping ions in localized regions. This obviates the necessity for annealing the entire wafer or device. The objective of this review is to comprehensively investigate laser annealing processes specifically targeting the crystallization of amorphous silicon (Si) and silicon carbide (SiC) samples. Silicon finds extensive use in diverse applications, including microelectronics and solar cells, while SiC serves as a crucial material for developing components designed to operate in challenging environments or high-power integrated devices. The review commences with an exploration of the underlying theory and fundamentals of laser annealing techniques. It then delves into an analysis of the most pertinent studies focused on the crystallization of these two semiconductor materials.

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“…A number of studies on exposure of silicon carbide to LI are available: laser annealing of implanted layers in SiC [1], laser stimulated recrystallization of amorphous a-SiC in crystalline c-SiC [2], formation of ohmic contacts [3,4], and laser ablation [5]. The last has been used to deposit thin SiC films [6] and to stimulate etching [7].…”

Section: Introductionmentioning

confidence: 99%