Excimer Laser-Based Lithography: A Deep Ultraviolet Wafer Stepper

Pol, Victor; Bennewitz, James H.; Escher, Gary C.; Feldman, Moran; Firtion, Victor A.; Jewell, Tanya E.; Wilcomb, B. E.; Clemens, J.T.

doi:10.1117/12.963697

Cited by 58 publications

(13 citation statements)

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“…12 As for option (c), the excirner laser is being improved so that it begins to look possible for use in the mass production line as a shorter wavelength light source for the stepper. 13 Because the full-width half-maximum spectral bandwidth of the excimer laser is much narrower than the current mercury lamp spectrum after it passes through the interference filter, it is less difficult to design a lens for chromatic aberration. Thus, the projection lens for deep UV can be designed and manufactured.…”

Section: Larger Numerical Aperturementioning

confidence: 99%

The Way To One-Half Micrometer Photolithography

Kameyama

Ushida

1987

Opt. Eng

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Section: Larger Numerical Aperturementioning

confidence: 99%

The Way To One-Half Micrometer Photolithography

Kameyama

Ushida

1987

Opt. Eng

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“…Reduction of the exposure wavelength from 436nm (0-line) to 248nm (KrF) and most recently to 193nm (ArF) have been significant accomplishments for optical lithography and were instrumental in driving advances in resist technology and illumination sources [5][6] [7]. Increasing NA from 0.3 to 0.6 has been equally important; however, the benefit gained in resolution is tempered by the reduced DOF.…”

Section: Lithography System Evolutionmentioning

confidence: 99%

Lithography system evolution: a perspective on a methodology for the rapid determination of 0.25um process capability.

Weed¹,

Ferguson²,

Liebmann³

et al. 1994

J. Photopol. Sci. Technol.

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“…1,2 One of the primary considerations is to attain high resistance in the photoresist polymers against plasma etching. For obtaining high-resolution patterns, a very thin photoresist film must be used.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of novel copolymers with the trimethylsilyl group for deep‐UV photoresists

Chiang

Lin

2002

J of Applied Polymer Sci

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N-(4-Acetoxyphenyl) maleimide (APMI) and three kinds of comonomers bearing a trimethylsilyl group were copolymerized at 60°C in the presence of azobisisobutyronitrile (AIBN) as an initiator in 1,4-dioxane to obtain the three IP, IIP, and IIIP copolymers. These copolymers were removed from the acetoxy group in a transesterification process into new IVP, VP, and VIP copolymers with a pendant hydroxyl group. Two modified processes were adopted to prepare photoresists using these copolymers. The first process involved mixing the dissolution inhibitor, o-nitrobenzyl cholate, with the new copolymers. Second, o-nitrobenzyl cholate was introduced into the copolymers using 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU) in dimethylformamide (DMF). The cyclic maleimide structure is responsible for the high thermal stability of these copolymers. After irradiation using deep-UV light and development with aqueous Na 2 CO 3 (0.01 wt %), the developed patterns showed positive images and exhibited good adhesion to the silicon wafer without using any adhesion promoter. The resolution of these resists was at least 0.8 m and an oxygen-plasma etching rate was 1/5.3 to that of hard-baked HPR-204.

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Excimer Laser-Based Lithography: A Deep Ultraviolet Wafer Stepper

Cited by 58 publications

References 0 publications

The Way To One-Half Micrometer Photolithography

The Way To One-Half Micrometer Photolithography

Lithography system evolution: a perspective on a methodology for the rapid determination of 0.25um process capability.

Synthesis and characterization of novel copolymers with the trimethylsilyl group for deep‐UV photoresists

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