Excimer laser deposited CuO and Cu2O films with third-order optical nonlinearities by femtosecond z-scan measurement

Yuan, Guang; Chen, Aiping; Fu, Ming; Long, Hua; Lu, Peixiang

doi:10.1007/s00339-010-6092-3

Cited by 25 publications

(8 citation statements)

References 24 publications

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“…High quality Cu 2 O thin films have been grown by several methods, like sputtering,432–435 pulsed laser deposition,436–438 molecular beam epitaxy,439 electrochemical deposition,440–443 sol‐gel,444 plasma evaporation,445 chemical vapour deposition446 and thermal oxidation 425, 447, 448. Among all these methods sputtering is a relatively cost effective process that can be used for large area deposition and thermal oxidation is the simplest, inexpensive and most conventional method to obtain copper oxide.…”

Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

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Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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“…However, by further increasing intensity the nonlinear absorption becomes dominant and the oxide layer changes to opaque again. The nonlinear absorption coefficients of Cu2O is  = 4.3 × 10 -9 cm/W [22]. Thus, a focused picosecond laser beam with high peak intensities up to 3 TW/cm 2 obtained in our experimental conditions induces nonlinear absorption in the transparent oxide layer on top of the copper target.…”

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confidence: 58%

Influence of nonlinear and saturable absorption on laser lift-off threshold of an oxide/metal structure

et al. 2020

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In this work, a new model of effective lift-off threshold of oxide/metal target is presented. The influence of nonlinear processes in the oxide layer on its removal from the metallic samples using picosecond laser was investigated. Nonlinear and saturable absorption in the layer was incorporated into modeling for prediction of effective laser lift-off threshold fluence change with varying peak intensities in z-scan type experiment for the first time. The new model coincides well with the experimental results.

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“…The detailed experiments have been published elsewhere [14,15]. The microstructures of the films were investigated by X-ray diffraction (XRD) (y-2y scan) and transmission electron microscopy (TEM, JEOL 2010 operated at 200 kV).…”

Section: Methodsmentioning

confidence: 99%