Excimer laser-induced temperature field in melting and resolidification of silicon thin films

Hatano, Mutsuko; Moon, Seung-Jae; Lee, Minghong; Suzuki, Kenkichi; Grigoropoulos, Costas P.

doi:10.1063/1.371823

Cited by 180 publications

(102 citation statements)

References 21 publications

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“…As a result, the crystallites exceed the layer thickness of the initial silicon layer. This effect is known as super lateral growth (SLG) [2,4], resulting in a high electron mobility within the p-Si layer and thus enabling faster TFT switching times [5]. ELA is applied for the production of active matrix liquid crystal display (AM-LCD)-or active matrix organic light-emitting diode (AMOLED)-TFT and is performed by the use of a xenon chloride (XeCl) excimer laser with a laser wavelength λ of 308 nm and an average power P of 315 W. By beam shaping optics, the raw beam is homogenised and converted to a line beam.…”

Section: Introductionmentioning

confidence: 99%

Increase in Generation of Poly-Crystalline Silicon by Atmospheric Pressure Plasma-Assisted Excimer Laser Annealing

Gredner¹,

Gerhard²,

Wieneke³

et al. 2013

JMSE-B

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Abstract:In this work, a novel atmospheric pressure plasma-assisted excimer laser annealing method for increasing the generation efficiency of poly-crystalline silicon from amorphous silicon layers is presented. Here, both the plasma and the laser propagate coaxially in order to generate energetic synergies. The influence of different process gases and plasma discharge modes as well as the working distance were investigated. Depending on the particularly applied plasma, the crystalline area was increased by a factor of approx. 1.1 to 1.9, where the highest efficiency was observed when introducing an argon plasma beam to the annealing process.

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Section: Introductionmentioning

confidence: 99%

Increase in Generation of Poly-Crystalline Silicon by Atmospheric Pressure Plasma-Assisted Excimer Laser Annealing

Gredner¹,

Gerhard²,

Wieneke³

et al. 2013

JMSE-B

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“…Various crystallization technologies have been extensively studied to form high-crystallinity Si films. [1][2][3][4][5][6] To improve device performance and uniformity, grain growth mechanism during rapid thermal annealing (RTA) and the control of grain structures including location and orientation have been investigated. Additionally, various measurement techniques have been proposed for observing phase transformation of Si films.…”

mentioning

confidence: 99%

“…Additionally, various measurement techniques have been proposed for observing phase transformation of Si films. [4][5][6][7][8][9][10][11][12] Transient reflectance (TR) measurements during RTA enable observation of the phase transformation of Si film since molten Si has much higher reflectivity than that of solid Si. [4][5][6][7][8][9][10] Transient conductance (TC) measurement makes it possible to obtain the volume of molten Si and liquid-solid interface velocity.…”

mentioning

confidence: 99%

“…[4][5][6][7][8][9][10][11][12] Transient reflectance (TR) measurements during RTA enable observation of the phase transformation of Si film since molten Si has much higher reflectivity than that of solid Si. [4][5][6][7][8][9][10] Transient conductance (TC) measurement makes it possible to obtain the volume of molten Si and liquid-solid interface velocity. [4][5][6][7][8][9] The TR and TC measurements indicated that partial or complete melting was induced directly from a-Si films by laser irradiation.…”

mentioning

confidence: 99%

“…[4][5][6][7][8][9][10] Transient conductance (TC) measurement makes it possible to obtain the volume of molten Si and liquid-solid interface velocity. [4][5][6][7][8][9] The TR and TC measurements indicated that partial or complete melting was induced directly from a-Si films by laser irradiation. Either microcrystallization or amorphization is induced after the complete melting of a Si film.…”

mentioning

confidence: 99%

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Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation

Hayashi

Fujita

Kamikura

et al. 2012

Applied Physics Letters

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Phase transformation of amorphous-silicon during millisecond annealing using micro-thermal-plasma-jet irradiation was directly observed using a high-speed camera with microsecond time resolution. An oval-shaped molten-silicon region adjacent to the solid phase crystallization region was clearly observed, followed by lateral large grain growth perpendicular to a liquid-solid interface. Furthermore, leading wave crystallization (LWC), which showed intermittent explosive crystallization, was discovered in front of the moving molten region. The growth mechanism of LWC has been investigated on the basis of numerical simulation implementing explosive movement of a thin liquid layer driven by released latent heat diffusion in a lateral direction.

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Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Chang

Tsybeskov

2010

Silicon Nanocrystals

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IntroductionFor the past 40 years, crystalline Si (c-Si) continues to be the major material for microelectronics, and modern silicon technology is superior compared to other semiconductors (e.g., II-VI and III-V compounds). In addition to the unique electronic and structural properties of bulk c-Si, silicon dioxide (SiO 2 ) and Si/SiO 2 interfaces, single-crystal Si possesses one of the best known lattice thermal conductivity [1,2]. This exceptional heat conductance is critically important for Si device heat management and circuit reliability. However, most of the modern complementary metal-oxide-semiconductor (CMOS) platforms are no longer single-crystal Si wafers but rather thin layers of Si-on-insulator (SOI), ultrathin strained Si and SiGe heterostructures that are the foundation of SiGe bipolar transistors (HBTs), and high-mobility metal-oxide-semiconductor field-effective transistors (MOSFETs). Major properties of these Si-based nanostructures are very different from those of bulk c-Si. For example, thermal conductivity in ultrathin SOI layers, SiGe alloys, and Si/SiGe nanostructures could be reduced by more than an order of magnitude compared to that in c-Si [3-6], and heat dissipation has become an important issue for modern nanoscale electronic devices and circuits. Thus, the understanding and improvement of heat management in Si-based nanostructures is critically important for the evolution of microelectronic industry.On the other hand, many interesting applications of nanostructured Si (ns-Si) in photonic devices and CMOS-compatible light emitters were recently discussed [7][8][9][10][11]. These ns-Si materials and devices can be produced by electrochemical anodization (i.e., porous Si [12]), chemical vapor deposition (CVD) using thermal decomposition of SiH 4 [13-15], Si ion implantation into a SiO 2 matrix [16], and deposition of amorphous Si/SiO 2 layers followed by thermal crystallization [17][18][19]. These ns-Si materials and devices produce an efficient and tunable light emission in the near-infrared and visible spectral region [20,21]. Also, it has been shown that under photoexcitation with energy density >10 mJ/cm 2 , optical gain is possibly Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

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Excimer laser-induced temperature field in melting and resolidification of silicon thin films

Cited by 180 publications

References 21 publications

Increase in Generation of Poly-Crystalline Silicon by Atmospheric Pressure Plasma-Assisted Excimer Laser Annealing

Increase in Generation of Poly-Crystalline Silicon by Atmospheric Pressure Plasma-Assisted Excimer Laser Annealing

Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

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