Excimer UV Processing of (Bi,Nd)4Ti3O12Ferroelectric Thin Films by Chemical Solution Deposition Method

Hayashi, Takashi; Iizawa, Naoya; Togawa, Daichi; Yamada, Mio; Sakamoto, Wataru; Kikuta, Koichi; Hirano, Shin‐ichi

doi:10.1143/jjap.42.5981

Cited by 13 publications

(8 citation statements)

References 2 publications

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“…According to the literature ( Figure ), a low‐temperature processing method for inorganic ferroelectric thin films, is considered successful if the range of temperatures used are appropriate for integration into the CMOS technology, where the resulting films should ideally display values of the switching charge density close to those required for a practical application such as NVFeRAMs (shaded area A in Figure ) . A further step beyond would involve the use of annealing temperatures close to those found in oxide semiconductors or organic ferroelectrics (shaded area B in Figure ).…”

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confidence: 99%

“…Among the different low‐temperature deposition techniques reported in the literature for ferroelectric oxide thin films, special attention has been paid to those based on chemical solution deposition (CSD), some of them referred to in Figure . During the last years, the use of UV‐irradiation has opened new paths for the low temperature processing of inorganic materials within the CSD methodology; the so‐called photochemical solution deposition (PCSD) .…”

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confidence: 99%

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Activated Solutions Enabling Low‐Temperature Processing of Functional Ferroelectric Oxides for Flexible Electronics

Bretos

Jiménez

et al. 2013

Advanced Materials

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Functional ferroelectric oxides for flexible electronics are achieved from activated solutions enabling low-temperature processing and large-area deposition directly on polymeric substrates. This processing technology reaches the lower limit temperature of crystallization at 300 °C, using a strategy that combines seeded diphasic precursors and photochemical solution deposition. Properties of these materials are comparable to those of high-temperature-processed counterparts and organic ferroelectrics.

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confidence: 99%

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Activated Solutions Enabling Low‐Temperature Processing of Functional Ferroelectric Oxides for Flexible Electronics

Bretos

Jiménez

et al. 2013

Advanced Materials

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“…Researchers have reported that the microstructure and other properties of CSD-derived ferroelectrics can be controlled by a UV-assisted thermal process that enhances the elimination of the residual organics. 3,8,9 Kim et al found that the amount of organic residue affects the nucleation, the growth, and, consequently, the formation of the lead zirconate titanate ͑PZT͒ film orientation. 19 They controlled the amount of the remnant organic by varying the drying temperature.…”

Section: Samplementioning

confidence: 99%

“…9b͒ showed the breakdown behavior at 2.5 V. These findings were consistent with those of other studies, which have indicated that the UV-irradiated ferroelectrics exhibit a higher leakage current. 3,12,13 This higher leakage current has been attributed to the surface roughness in the UV-irradiated film. In the present study, XPS results suggested that a relatively high ratio of a conductive Bi metal might cause the low breakdown voltage and the high leakage current density of the photoirradiated SBT.…”

Section: Samplementioning

confidence: 99%

Halogen-Light-Enhanced Metallorganic Decomposition of SrBi[sub 2]Ta[sub 2]O[sub 9] Ferroelectric Thin Films

Leu

Yao²,

Hsu³

et al. 2010

J. Electrochem. Soc.

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We investigated the influence of the halogen-light exposure on the metallorganic decomposition of strontium bismuth tantalate ͓SrBi 2 Ta 2 O 9 ͑SBT͔͒ thin films deposited by chemical-solution deposition ͑CSD͒ on platinum ͑Pt͒ capacitors. The UV absorption spectrum obtained using Fourier transform infrared showed that the removal of the residual organic species from the SBT solution layer was enhanced by the halogen light during drying at 150°C. The halogen-light exposure improved ferroelectric properties and the formation of a ͑200͒-preferred film structure, a superior ferroelectric property. In addition, the decomposition of oxidated bismuth ͑Bi-O bonds͒ in SBT as a result of the halogen-light exposure was also observed. Some reduction in metallic Bi from the oxidated state that occurred during the high temperature rapid thermal annealing was enhanced by the halogen-light exposure. The high Bi:Bi 2 O 3 ratio in the SBT film samples exposed to the halogen light was responsible for their high leakage current. At 400°C, the annealing in a N 2 O ambient was effective in oxidizing Bi and in reducing the leakage current densities by about 2 orders of magnitude. Although the specific interaction between the halogen light and the CSD film remains unclear, the cost-effective and safe halogen lamp may be an appropriate choice for photoassisted thermal processes for the production of ferroelectrics.Strontium bismuth tantalate ͓SrBi 2 Ta 2 O 9 ͑SBT͔͒ is a promising material for thin-film application in the production of the nonvolatile random access memory because of its excellent ferroelectric properties: low leakage current, low operating voltage, and fatigue endurance of up to 10 12 switching cycles. 1 However, SBT has a high crystallization temperature ͑Ͼ750°C͒ that is incompatible with the conventional large-scale integration processes and a relatively low remnant polarization, making SBT unsuitable for certain applications. Researchers have developed several chemical and physical deposition methods for the production of the SBT-based thin films. Among them, the chemical-solution deposition ͑CSD͒ is popular because of its advantages over the other methods: low cost, controllability of composition, and ease of preparation of complex mixed oxides used in thin films. 2 Pyrolysis is an essential step in the CSD process in which the excess solvent is evaporated, thereby removing the residual organic species present in the precursor solution. Although it is difficult to completely eliminate the organics via pyrolysis, the UV-light-assisted pyrolysis has been shown to successfully lower the crystallization temperature of ferroelectric films and to stabilize the film-substrate interface during annealing. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] The UV irradiation enhances the pyrolysis by causing an early oxidation and a cracking of carbon-hydrogen ͑C-H͒ bonds. However, only a few investigations regarding the effects of the UV light on the properties of the SBT film have been conducted. 5,13 In the present stu...

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“…Elimination of organic molecules has been proven to be easier through the sol-gel process when using photo-assistance with UV light. [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] This is mainly caused by photoexcitation, which results in the dissociation of alkyl group-O bonds and the formation of metal-O-metal bonds at low temperatures. Furthermore, the dissociated molecules, which are the products of UV-irradiation, are solvent-labile species that can be easily removed from the gel layer with the polar solvents.…”

Section: Introductionmentioning

confidence: 99%

Photochemical-induced self-seeding effect on lead zirconate titanate thin film

et al. 2011

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Excimer UV Processing of (Bi,Nd)₄Ti₃O₁₂Ferroelectric Thin Films by Chemical Solution Deposition Method

Cited by 13 publications

References 2 publications

Activated Solutions Enabling Low‐Temperature Processing of Functional Ferroelectric Oxides for Flexible Electronics

Activated Solutions Enabling Low‐Temperature Processing of Functional Ferroelectric Oxides for Flexible Electronics

Halogen-Light-Enhanced Metallorganic Decomposition of SrBi[sub 2]Ta[sub 2]O[sub 9] Ferroelectric Thin Films

Photochemical-induced self-seeding effect on lead zirconate titanate thin film

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