Excitation-energy dependence in the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>L</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>,<i>3</i>fluorescence spectrum of Si

Rubensson, Jan‐Erik; Mueller, D.; Shuker, R.; Dl, Ederer; Zhang, Ch.; Jia, Jinbiao; Ta, Callcott

doi:10.1103/physrevlett.64.1047

Cited by 78 publications

(26 citation statements)

References 21 publications

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“…We note in this context that the SXE spectra discussed in the preceding section are not affected by satellite structures, which is also due to the high efficiency of screening in SiC. A further dependence of the SXE spectra of broadband materials on the energy of the photons used for core hole excitation was observed by Rubensson et al 26 in 1990. Using monochromatized synchrotron radiation these authors studied the Si L 2,3 SXE spectra of crystalline Si for energies of the incident photons in the vicinity of the Si 2 p absorption thresholds.…”

Section: Local Symmetry Resolved Band Mappingmentioning

confidence: 67%

Electronic structure of silicon carbide polytypes studied by soft x-ray spectroscopy

et al. 1999

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The electronic structure of SiC polytypes is investigated with soft x-ray absorption ͑SXA͒ and emission ͑SXE͒ spectroscopy studying the local C p and Si (sϩd) partial density of states ͑LPDOS͒ of n-doped cubic 3C-SiC and hexagonal 4H-and 6H-SiC. The shape and the energetic position of the occupied LPDOS of the valence band measured by nonresonantly excited SXE spectroscopy is nearly identical for the three polytypes, reflecting the local identity of the crystalline structures. The variation of the band gap from 2.2 eV for 3C-SiC to 3.0 eV for 6H-SiC, and 3.3 eV for 4H-SiC is caused by changes of the conduction band alone as reflected by the unoccupied LPDOS measured by SXA. Additionally, by resonantly excited SXE information on the band dispersion and the local symmetry character of the valence states is obtained. ͓S0163-1829͑99͒09715-5͔

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Section: Local Symmetry Resolved Band Mappingmentioning

confidence: 67%

Electronic structure of silicon carbide polytypes studied by soft x-ray spectroscopy

et al. 1999

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“…2 indicate the expected phase transition from amorphous Si before SPC ͓spectra ͑ii͔͒, to poly-Si after SPC ͓spectra ͑iii͔͒. Following Rubensson et al, 5 the three Si L 2,3 main features A-C observed for spectra ͑iii͒ are ascribed to electrons from Si 3s ͑A͒, hybridized s-p ͑B͒, and 3p-derived states ͑C͒ decaying into the Si 2p core holes. The difference in the Si L 2,3 spectra ͑i͒ can be explained by the broadening of these contributions due to the amorphous nature of the material.…”

Section: ͑͒mentioning

confidence: 99%

“…of ZnO detected in second order͒. [5][6][7] The effective attenuation lengths ͑ ‫ء‬ ͒ for the Si L 2,3 and O K emission roughly correspond to 0.5 and four times the Si layer thickness, respectively. 8 Hence, the Si L 2,3 spectra are dominated by the near-surface material properties of the Si layer and the O K measurements primarily probe the chemical structure of the TCO bulk.…”

Section: ͑͒mentioning

confidence: 99%

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

Bär

Wimmer

Wilks

et al. 2010

Applied Physics Letters

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͑͒The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy ͑XES͒ before and after solid-phase crystallization ͑SPC͒ at 600°C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO 2 interlayer, an effective thickness of ͑5 Ϯ 2͒ nm after SPC could be estimated. ͓͔ Polycrystalline silicon ͑poly-Si͒ is a promising absorber material candidate for low-cost, high efficiency thin film solar cells. An attractive approach to obtain poly-Si at relatively low process temperatures is solid-phase crystallization ͑SPC͒ of hydrogenated amorphous silicon ͑a-Si:H͒. 1 Solar cell mini modules ͑94 cm 2 ͒ based on poly-Si prepared by the SPC process have already demonstrated efficiencies of up to 10.4% by utilizing a complex point contact design. 2 If this contact structure could be replaced by a transparent conducting oxide ͑TCO͒, the manufacturing process would be greatly simplified and an easy series interconnection scheme using laser scribing would become possible; both would aid large-scale mass production needed for commercialization. In addition, by texturing the TCO, one could easily improve light trapping. For these reasons, an Al/ a-Si: H͑p + ͒ / poly-Si͑p͒ / poly-Si͑n + ͒ / ZnO: Al/ glass device structure was recently suggested. 3 This design, however, involves a high-temperature annealing step ͑SPC at 600°C͒, which leads to significantly higher electron mobilities in the capped ZnO:Al layer 4 but could also induce chemical interaction/diffusion processes at/across the Si/ZnO interface. Hence, this letter presents a soft x-ray emission spectroscopy ͑XES͒ investigation of the buried Si/ZnO interface before and after SPC.For our experiments we used Borofloat ® borosilicate glass covered with an approximately 80 nm thick Si 3 N 4 layer ͑as diffusion barrier͒ as the substrate. As TCO a 900 nm ZnO:Al layer rf-sputtered onto the substrate was used ͓sample ͑i͔͒. Subsequently, 50 nm thin films of phosphorusdoped a-Si: H͑n + ͒ were deposited by plasma-enhanced chemical vapor deposition ͑PECVD͒ at approx. 200°C ͓sample ͑ii͔͒. For more details about sample preparation see Ref.2. After a-Si: H͑n + ͒ deposition, some samples underwent SPC at 600°C for 24 or 72 h in a tube furnace under N 2 -flow ͓samples ͑iii 24 ͒ and ͑iii 72 ͔͒. A schematic presentation of the investigated samples is shown in Fig. 1. To identify and eliminate spectral contributions of native silicon oxides at the Si thin film surfaces, XES measurements were performed before and after sample etching in hydrofluoric ͑HF͒ acid ͑30 s in 5% aqueous HF-solution͒. Reference materials ͑single crystalline Si as well as SiO 2 and ZnO powders͒ were charac...

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“…Since the first observation of resonant effects in soft x-ray fluorescence [1], resonant inelastic xray scattering (RIXS [2]) with soft x-rays has been successfully developed as a method to investigate the band structure of solids [3][4][5][6][7][8][9][10][11][12]. Recently, RIXS was also used to study the electronic structure of liquids (e.g., water [13][14][15]).…”

Section: Introductionmentioning

confidence: 99%

Resonant inelastic soft x-ray scattering of CdS: A two-dimensional electronic structure map approach

et al. 2009

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Resonant inelastic x-ray scattering (RIXS) with soft x-rays is uniquely suited to study the electronic structure of a variety of materials, but is currently limited by low (fluorescence yield) count rates. This limitation is overcome with a new high-transmission spectrometer that allows to measure soft x-ray RIXS "maps". The S L 2,3 RIXS map of CdS is discussed and compared with density functional calculations. The map allows the extraction of decay channel-specific "absorption spectra", giving detailed insight into the wave functions of occupied and unoccupied electronic states.

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Excitation-energy dependence in theL2,3fluorescence spectrum of Si

Cited by 78 publications

References 21 publications

Electronic structure of silicon carbide polytypes studied by soft x-ray spectroscopy

Electronic structure of silicon carbide polytypes studied by soft x-ray spectroscopy

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

Resonant inelastic soft x-ray scattering of CdS: A two-dimensional electronic structure map approach

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