2005
DOI: 10.1143/jjap.44.6113
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Excitation-Power Dependence of Free Exciton Photoluminescence of Semiconductors

Abstract: We have derived an analytical formula for the excitation-power dependence of the free exciton photoluminescence (PL) intensity. It has been found that the PL intensity I depends on the power of the excitation laser L as I∝L k , where k is the power index. We have deduced the analytical formula that describes the value of k for the free exciton PL emission under the above-band-gap excitation conditions. The results indicate that the value of k is in the … Show more

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Cited by 52 publications
(54 citation statements)
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“…Fast charge trapping process that was widely observed within the perovskite can also influence this linear relationship. [ 22,31,35,40,41 ] In addition, when multiple charge recombination processes (e.g., first‐order radiative and non‐radiative, and second‐order radiative) exist within the perovskite, it is usually hard to observe a simple linear or quadratic relationship between the I PL and I exc (Figure S5, Supporting Information). As such, it is hard in using the relationship between the I PL and the I exc to determine the perovskite charge character in experiment especially when large excitation fluence is used.…”
Section: Resultsmentioning
confidence: 99%
“…Fast charge trapping process that was widely observed within the perovskite can also influence this linear relationship. [ 22,31,35,40,41 ] In addition, when multiple charge recombination processes (e.g., first‐order radiative and non‐radiative, and second‐order radiative) exist within the perovskite, it is usually hard to observe a simple linear or quadratic relationship between the I PL and I exc (Figure S5, Supporting Information). As such, it is hard in using the relationship between the I PL and the I exc to determine the perovskite charge character in experiment especially when large excitation fluence is used.…”
Section: Resultsmentioning
confidence: 99%
“…To further understand the relaxation kinetics of photo-generated charge carriers correlated to defect states of perovskite thin films, excitation-power dependent PL was undertaken and shown in Fig.4. It is worthwhile noting that the PL intensity I PL has a relationship with the power P of the excitation laser as I PL  P β , where β is the power index [21,22].…”
Section: Resultsmentioning
confidence: 99%
“…The black line represents an analysis with a 3 rd order polynomial for the case of the polycrystalline perovskite (a) and with a 2 nd order polynomial in the case of the microcrystals (b) and the nanocrystals (c).To further investigate the recombination mechanism in the MAPbBr3 thin films, the time-integrated PL intensity (at the spectral maximum) was plotted as a function of the excitation density(Figure 4, only data below the threshold of exciton-exciton annihilation and Auger recombination is shown). The result was analyzed with a power law function of the form ~K, where F is the excitation fluence or density, and k is a real number exponent, which provides information about the order of the recombination process 13,66,67.…”
mentioning
confidence: 99%