Abstract:Measurements of the excitation spectra (of the photoluminescence lines below the band gap of CdTe led to the identification of emissions originating from excitons bound to neutral donors, to ionized donors, and to neutral acceptors, as well as from two-electron transitions. Oscillatory variations of the free and bound exciton emission intensity with the energy change of the exciting light above the band gap and their changes with temperature indicated details of the exciton relaxation mechanisms.Mcssungen der … Show more
“…Similar emission lines have been observed in many other materials, CdTe, 14 GaAs, 15,16 CdS, 17 and ZnSe. 13 These transitions were first interpreted as excited states of the neutral-donor-bound-exciton D 0 ,X but with very little detail as to their nature.…”
Neutral-donor-bound-exciton transitions have been observed in ZnO. The isolated neutral donors are made up of defect pair complexes. The neutral-donor nature of these pair complexes was determined from magneticfield measurements and from two-electron transitions. Excited states of the neutral-donor bound excitons were observed in the form of rotator states analogous to rotational states of the H 2 molecule.
“…Similar emission lines have been observed in many other materials, CdTe, 14 GaAs, 15,16 CdS, 17 and ZnSe. 13 These transitions were first interpreted as excited states of the neutral-donor-bound-exciton D 0 ,X but with very little detail as to their nature.…”
Neutral-donor-bound-exciton transitions have been observed in ZnO. The isolated neutral donors are made up of defect pair complexes. The neutral-donor nature of these pair complexes was determined from magneticfield measurements and from two-electron transitions. Excited states of the neutral-donor bound excitons were observed in the form of rotator states analogous to rotational states of the H 2 molecule.
“…Similar emission lines have been observed in many other materials, such as ZnSe, [36] CdTe, [37] GaAs, [37,39] and CdS. Similar emission lines have been observed in many other materials, such as ZnSe, [36] CdTe, [37] GaAs, [37,39] and CdS.…”
ZnO is a wide-band-gap semiconductor material and is recognized as having potential for optoelectronic device applications. Some of the properties that support this assertion are (a) low threshold power for optical pumping at room temperature, [1][2][3] (b) large exciton binding energy (60 meV), which may give rise to efficient UV lasing, and (c) a tunable band gap from 2.8 to 4.0 eV. [4,5] A clear understanding of recombination mechanisms is important for achieving the potential applications. In pursuit of this goal the emission and reflection spectra of ZnO have been extensively investigated and the data have been interpreted in terms of the wurtzite crystal band structure applicable to ZnO. In this study the intrinsic exciton transitions were observed in emission from several ZnO crystals.
Free ExcitonsThe high quality ZnO samples were cut from a 2-in. boule grown by a seeded physical vapor transport method. Photoluminescence (PL) spectral measurements were made at 2 K with the sample immersed in liquid He.
A quantum-mechanical many-particle system may exhibit non-local behavior in that measurements performed on one of the particles can affect a second one that is far apart. These so- -3 -
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.