Excitation spectroscopy on donor-acceptor pair luminescence in GaP

Senske, W.; Street, R. A.

doi:10.1103/physrevb.20.3267

Cited by 16 publications

(5 citation statements)

References 37 publications

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“…7, 8). The energy shift corresponding to the 1s-2p -1 transition decreases, which could be understood as a result of a screening of the acceptor by the donor potential [5,6]. What is more interesting is that the spin flip transitions are also modified, showing clear splitting for excitation energies larger than 1.500 eV (Figs.…”

Section: Resultsmentioning

confidence: 94%

“…In the case of acceptor states in quantum wells, the light-heavy hole splitting is induced by the symmetry of the confining potential, whereas in the case of donor-acceptor pairs, the acceptor wave function is modified by the interaction with a neighboring donor center. This interaction has axial symmetry and strongly depends on the donor-acceptor pair separation, and can be used as an external perturbation, allowing to distinguish between acceptor states of different symmetry [6,7].…”

Section: Resultsmentioning

confidence: 99%

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Selective magneto‐luminescence spectroscopy of donoacceptor pairs in n‐GaAs

Wysmołek

2002

Physica Status Solidi (b)

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The results of selective magneto-luminescence measurements of donor -acceptor pairs in n-type GaAs are discussed. The experimental data are compared with the calculated energy levels of a hydrogen-like atom in a magnetic field, enabling us to identify a large number of high angular momentum states of the hydrogen-like impurity in magnetic fields. It is shown that in addition to intra-donor transitions, the spin-flip excitations of donor -acceptor pairs involving heavy and light holes can be observed, yielding information about g-factors for heavy and light holes. For the pairs with separations smaller than the donor Bohr radius, a strong modification of the SPL spectrum is observed. This effect is discussed in terms of modification of the acceptor ground state induced by the interaction with a neighbouring donor centre.

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Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%

Selective magneto‐luminescence spectroscopy of donoacceptor pairs in n‐GaAs

Wysmołek

2002

Physica Status Solidi (b)

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“…Photoluminescence excitation spectroscopy (PLE) on the donor-acceptor pair (DAP) luminescence has been used long ago for obtaining information on the electronic states of the donor or acceptor species in several materials [1][2][3]. This is done by monitoring the photoluminescence intensity at an energy corresponding to the electron-hole recombination at a pair separated by certain distance R, while scanning the excitation photon energy above the monitored position.…”

Section: Introductionmentioning

confidence: 99%

“…where E G is the electronic bandgap, E D and E A are the donor and acceptor ionization energies, respectively, ε is the dielectric permittivity, e is the electron charge, and J(R) is a correction term, which vanishes rapidly with the distance R. In Ref. [1] it is argued that only the excited states of the shallower species are observed (let us assume for definiteness that this is the donor, as in the case of SiC), because transitions involving excited states of the acceptor will be degenerate with transitions to the donor continuum and are probably not seen. However, the acceptors in 4H and 6H SiC may have excited states close to the ground state (referred further as "low-lying excited states"), because of the small value of the spin-orbit splitting of the valence band in these polytypes.…”

Section: Introductionmentioning

confidence: 99%

“…Hence, these states may also appear in the excitation spectra. According to [1], peaks in the PLE spectrum will be observed when the excitation energy E ex coincides with an electronic transition, in which the electron is transferred from the ionized acceptor to an excited state of the donor * D E , leaving the acceptor with a hole in the ground state (or vice versa). The corresponding energy balance is…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC

Ivanov

Janzén

2004

MSF

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This paper presents the excitation spectra of the donor-acceptor pair emission in 4H and 6H SiC doped with nitrogen and aluminum, obtained using a suitable dye laser. When the excitation spectra of different pairs are compared, two main types of peaks are seen in the spectra: peaks appearing at almost the same energy shift from the registered photon energy, and peaks appearing at constant absolute energy positions. The former are attributed mainly to transitions leaving either the donor electron, or the acceptor hole, or both in excited states, whereas the latter are seen as evidence for extensive exciton transfer from neutral acceptors to donor-acceptor pairs.

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Electron–Hole Correlation Effects on Donor–Acceptor Pairs

Kartheuser

Babcenco

Evrard

1982

Physica Status Solidi (b)

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The effect of the electron-hole correlations on the effective mass electronic states of donor-acceptor (DA) pairs in polar semiconductors is investigated. Variational calculations are carried out and compared with previous theoretical work in the case of GaP and ZnSe. Analytic expressions for the energy, charge density, and pair distribution function of DA pairs are obtained as a function of the pair separation R. It is shown that whereas the energy and the charge distribution of a DA pair are only slightly affected by the electron-hole correlations, the pair distribution function shows a strong enhancement a t short electron-hole distance.Die Wirkung der Elektron-Loch-Korrelationen auf die elektronischen Zustiinde von Donator-Akzeptor (DB)-Paaren in polaren Halbleitern wird im Rahmen der Effektivmassenniiherung untersucht. Ein Variationsverfahren wird angewandt, und die Ergebnisse werden mit friiheren Berechnungen im FalIe von GaP und ZnSe verglichen. Analytische Formeln fiir die Elektron-Loch-Rekombinationsenergie, die Ladungsdichte und die radiale Verteilungsfunktion des DA-Paares werden als Funktion des Paarabstandes R gefunden. Die Rechnungen zeigen, dal3 Rekombinationsenergie und Ladungsdichte nur wenig durch die Elektron-Loch-Korrelation beeinfluBt werden, die radiale Verteilungsfunktion dagegen bei kleinem Elektron-Loch-Paarabstand wesentlich veriindert wird.

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Excitation spectroscopy on donor-acceptor pair luminescence in GaP

Cited by 16 publications

References 37 publications

Selective magneto‐luminescence spectroscopy of donoacceptor pairs in n‐GaAs

Selective magneto‐luminescence spectroscopy of donoacceptor pairs in n‐GaAs

Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC

Electron–Hole Correlation Effects on Donor–Acceptor Pairs

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