Most air-stable 2D materials are relativelyi nert, which makes their chemicalm odification difficult. In particular,i nt he case of MoS 2 ,t he semiconducting 2H-MoS 2 is much less reactive than itsm etallicc ounterpart, 1T-MoS 2 .A s ac onsequence, there are hardly any reliable methods for the covalent modification of 2H-MoS 2 .A ni deal method for the chemical functionalization of such materials should be both mild, not requiring the introductiono falarge number of defects, and versatile, allowing for the decoration with as many different functional groups as possible. Herein, ac omprehensive study on the covalentf unctionalization of 2H-MoS 2 with maleimidesi sp resented. The use of ab ase (Et 3 N) leads to the in situ formationo fasuccinimide polymer layer, covalently connected to MoS 2 .I nc ontrast, in the absence of base, functionalization stops at the molecular level.M oreover,t he functionalization protocol is mild (occursa tr oom temperature), fast (nearlyc omplete in 1h), and very flexible (11different solvents and 10 different maleimides tested). In practical terms, the procedures described here allow for the chemistt om anipulate 2H-MoS 2 in av ery flexible way,d ecorating it with polymers or molecules, and with aw ide range of functional groups fors ubsequent modification. Conceptually,t he spurious formationo fa no rganic polymerm ight be general to other methods of functionalization of 2D materials, where al arge excesso fm olecular reagents is typically used.