Excited states of donors bound toXvalleys in GaAs–AlAs type II structures

Weber, Gerald; Carneiro, Gleise N.

doi:10.1006/spmi.1996.0377

Cited by 1 publication

(1 citation statement)

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“…Specifically, substitutional shallow donors will not be linked to the valley but to the lower-lying X valleys [2]. Moreover, these valleys are no longer degenerate but the X Z and X X,Y valleys will split into different energies due to the quantum confinement in the growth (z) direction and biaxial strain effects [3]. Effects of -X mixing on the binding energies of shallow donors in type-I quantum wells, near the type-I-type-II transition, were studied by Wang et al [4].…”

Section: Introductionmentioning

confidence: 99%

Binding energy and radiative lifetime of an exciton in a type-II quantum well

Peter¹,

Lee

2011

Phys. Scr.

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Donor binding energies of ground- and excited state excitons have been computed with two sets of effective masses linked to X valleys of a GaSb/InAs/GaSb quantum well. The calculations have been performed using the variational technique within a single-band effective mass approximation. The valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions with the strain-induced confinement potential. We observe that the values of variational parameters are consistent when a two-parametric trial wave function is used. The oscillator strength and the lifetime for radiative recombination of the exciton have been computed as a function of well width. It is inferred that these binding energies are quite sensitive to the effective masses that are used in the calculation and the spatial separation of electrons and holes, allowing for the formation of very stable excitons. The observed radiative lifetime is in good agreement with the results of other investigators.

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Section: Introductionmentioning

confidence: 99%