We present a variational calculation in the effective-mass approximation of the binding energies of shallow donors in a GaAs-GaAIAs quantum wells. The energies and variational wavefunctions associated with the Is-like ground state as well as some excited states (Zs, Zp,,,, Zp,, 3s, 3px,, and 3pJike) are obtained as functions of the position of the impurity in the well. The intra-donor transition strengths and the infrared absorption spectra are calculated and results compare well with previous theoretical and experimental work.

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