Exciton binding energies and band gaps in GaN bulk crystals

Reimann, K.; Steube, M.; Fröhlich, D.; Clarke, Simon J.

doi:10.1016/s0022-0248(98)00236-x

Cited by 32 publications

(18 citation statements)

References 14 publications

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“…Assuming that the e-A peak shifts with temperature as 0.5kT (which agrees with the observed shift of the e-A peak between 30 and 60 K), the e-A related ZPL at 0-10 K is expected to be located at 2.590 eV. Since the DBE peak in this sample (3.473 eV) is shifted by 2 meV from its position in unstrained, bulk GaN (3.471 eV), and the bandgap in the latter is 3.504±0.001 eV (in agreement with the DBE and FE binding energies of 7 and 26±1 meV, respectively) [2,16,17,18], the bandgap in sample H2057 is E g = 3.506 eV. Then, the thermodynamic transition level of the defect responsible for the YL band can be found as E A = E g -E 0 = 0.916 eV in the low-temperature limit.…”

Section: Fine Structure Of the Yl Bandsupporting

confidence: 78%

Zero-phonon line and fine structure of the yellow luminescence band in GaN

et al. 2016

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The yellow luminescence band was studied in undoped and Si-doped GaN samples by steady-state and time-resolved photoluminescence. At low temperature (18 K), the zerophonon line (ZPL) for the yellow band is observed at 2.57 eV and attributed to electron transitions from a shallow donor to a deep-level defect. At higher temperatures, the ZPL at 2.59 eV emerges, which is attributed to electron transitions from the conduction band to the same defect. In addition to the ZPL, a set of phonon replicas is observed, which is caused by the emission of phonons with energies of 39.5 meV and 91.5 meV. The defect is called the YL1 center. The possible identity of the YL1 center is discussed. The results indicate that the same defect is responsible for the strong YL1 band in undoped and Si-doped GaN samples.

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Section: Fine Structure Of the Yl Bandsupporting

confidence: 78%

Zero-phonon line and fine structure of the yellow luminescence band in GaN

et al. 2016

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“…297,298 Those experiments yielded a free-A-exciton transition energy of 3.475 eV and an estimate of 28 meV for the binding energy. Numerous other PL and absorption studies were published in the 1990s, 296,[299][300][301][302][303][304][305][306][307][308] which broadened the range of reported A-exciton transition energies at 0 K to 3.474-3.507 eV. It has been suggested that this spread is due to variations of the strain conditions present in the different experiments.…”

Section: Wurtzite Ganmentioning

confidence: 98%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,674

289

3,822

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, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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“…Salvador et al obtained a hole mass of 0.3m 0 from a fit to PL spectra [58]. Fits of the exciton binding energies yielded hole masses in the range 0.9-1.2m 0 [45,89], while Kasic et al [72] obtained 1.4m 0 from an infrared ellipsometric study on p-doped GaN. Merz et al [40] obtained an isotropically averaged heavy-hole bare mass of 0.54m 0 from luminescence data, and also pointed out that the polaron correction for heavy holes in GaN is nearly 13%.…”

Section: Ganmentioning

confidence: 99%

Electron Bandstructure Parameters

Vurgaftman

Meyer

2007

Nitride Semiconductor Devices: Principles and Simulation

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Fig. 2.1Recommended energy gaps of wurtzite nitride semiconductor alloys (lines) and binaries (points) vs. lattice constant. Band Structure Models 15The spin-degenerate conduction band is described by the anisotropic, parabolic form with wavefunctions comprised of the s-orbital (angular momentum l = 0) states:where k * , k * z are the wavevectors and m * , m * ⊥ are the effective masses along the in-plane and c-axis ([0001]) directions, respectively, a c1 and a c2 are the conduction-band deformation potentials, and ε ij are the strain tensor components. In the following, we cite the interband deformation potentials a 1 and a 2 , from which a c1 and a c2 may be obtained by subtracting the hydrostatic shift in the valence band, as determined by the D parameters in Eq. (2.5). The anisotropy is a distinguishing feature of the hexagonal crystal structure. Since the crystal-field and spin-orbit splittings in wurtzite nitride materials are rather small, the momentum matrix element E P and the F parameter are related to the effective mass and energy gap via:

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Exciton binding energies and band gaps in GaN bulk crystals

Cited by 32 publications

References 14 publications

Zero-phonon line and fine structure of the yellow luminescence band in GaN

Zero-phonon line and fine structure of the yellow luminescence band in GaN

Band parameters for III–V compound semiconductors and their alloys

Electron Bandstructure Parameters

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