Exciton binding energy in GaAsBiN spherical quantum dot heterostructures

Das, Subhasis; Dhar, S.

doi:10.1016/j.spmi.2017.01.030

Cited by 7 publications

(3 citation statements)

References 33 publications

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“…The behavior of the binding energies without pressure (P ¼ 0 kbar) is similar to the previous results found in refs. [38,39,49,50]. For all pressures, we observe that the binding energy increases from its bulk value in GaAs as the dot radius is reduced, reaches a maximum value, and then drops to the bulk value characteristic of the barrier material as the dot radius goes to zero.…”

Section: Resultsmentioning

confidence: 75%

“…The total ground state energy E ex of the exciton in terms of the variational parameter and the dot radius is calculated as an eigenvalue problem by using appropriate expressions for the ground state wave functions in the interior and exterior region of the dot and evaluating the normalization constants and variational parameters using a technique used in refs. . Schrödinger equations for the electron are solved for r e/h > R (dot radius) resulting in a transcendental equation of the form:

K \cot true(K R true) = - κ

w h e r e K = \frac{\sqrt{2 m_{e /h}^{*} E_{e /h}}}{ℏ} a n d κ = \frac{\sqrt{2 m_{normale}^{*} true(V_{e / h} - E_{e / h} true)}}{ℏ}

…”

Section: Theoretical Formulationmentioning

confidence: 99%

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Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications

Mal

Jayarubi²,

Das³

et al. 2018

Physica Status Solidi (b)

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The hydrostatic pressure induced band diagram of an InGaAsN/GaAs spherical quantum dot (QD) system is theoretically calculated using an expanded form of standard 8 band k · p Hamiltonian. The band parameters including energy gap, band offsets, and effective masses of electron and hole as a function of hydrostatic pressure are extracted using 10 band k · p model to calculate optical gain, threshold current density, and confined exciton binding energies of the QD system for the possible potential applications in 1.3–1.55 μm laser diodes. The optical gain increases with the increase in hydrostatic pressure up to 30 kbar and eventually decreases for further application of higher pressures. This effect is not usually observed in InGaAsN/GaAs quantum wells owing to the strong dependence of hole and electron effective masses with the hydrostatic pressure. A relative blue shift is observed in the gain spectra due to the increase in hydrostatic pressure or carrier concentration whereas a redshift is observed due to the increase in geometrical dimensions or impurity concentration which helps in estimating the range of operation of InGaAsN/GaAs QD based devices. The obtained binding energies, threshold current densities, and strain within the QDs help in understanding the influence of pressure and dot radius on these parameters.

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Section: Resultsmentioning

confidence: 75%

K \cot true(K R true) = - κ

w h e r e K = \frac{\sqrt{2 m_{e /h}^{*} E_{e /h}}}{ℏ} a n d κ = \frac{\sqrt{2 m_{normale}^{*} true(V_{e / h} - E_{e / h} true)}}{ℏ}

…”

Section: Theoretical Formulationmentioning

confidence: 99%

Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications

Mal

Jayarubi²,

Das³

et al. 2018

Physica Status Solidi (b)

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“…This diversity concerns both the geometric shape of the structure and the profile of the associated confinement potential. There have been several reports on excitonic phenomena in 0D nanostructures where they are described as rectangular quantum boxes (QB) with a finite or infinite confinement barrier [1][2][3], spherical quantum dots with a rectangular potential barrier [4,5], parabolic [6][7][8] and gradual potential profile [9]. We found also a description of 0D nanostructures as cylindrical [10][11][12][13][14][15][16], conical [17], triangular [18], and lens-shaped quantum dots [19].…”

Section: Introductionmentioning

confidence: 59%

Exciton in Semiconductor Quantum Box: An Important Analytical Computational Step

Haddad¹

2023

Acta Phys. Pol. A

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A theoretical model to determine the properties of an exciton confined in a semiconductor quantum box with rectangular potential is presented. We have used the two-band model and the effective mass approximation. The theoretical approach includes a considerable analytic phase and makes it possible to reduce the numerical calculations. According to the new formulation, the limit cases for an exciton in a bulk semiconductor and an exciton confined in a two-dimensional structure are deduced, and a good agreement is shown in comparison with known results in the literature. We calculated the binding energy, spatial extension, and effective Bohr radius of the exciton. The variation law of the confined exciton energy, as a function of the dimension of the semiconductor quantum box, is established. The illustrations are given for a rectangular confining potential with finite and infinite barriers.

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Exciton states in InGaAsP/InP core–shell quantum dots under an external electric field

Wang

Gong

et al. 2019

J Comput Electron

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Exciton binding energy in GaAsBiN spherical quantum dot heterostructures

Cited by 7 publications

References 33 publications

Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications

Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications

Exciton in Semiconductor Quantum Box: An Important Analytical Computational Step

Exciton states in InGaAsP/InP core–shell quantum dots under an external electric field

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