editorialGraphene 1 is arguably the most famous material of the last decade; the fascination with its properties has spread beyond the scientific community, especially since the Nobel Prize was awarded in 2010 for its isolation. While research on graphene itself is still extremely active, one cannot overlook the trigger it constituted for the pursuit of atomically thin forms of other materials, such as semiconductors, boron nitride and, more recently, Xenes. All these 2D materials offer endless possibilities for fundamental research, as well as the demonstration of improved or even entirely novel technologies.Transition metal dichalcogenides (TMDs) are atomically thin semiconductors of the type MX 2 , where a transition metal atom (M = Mo, W, We and so on) is sandwiched between two chalcogen atoms (X = S, Se, Te and so on) 2,3 . TMDs offer something that graphene doesn't have: a bandgap, which makes them immediately suitable candidates for semiconductor-based electronics and optoelectronics applications -even at room temperature. Additionally, the excitonic transitions in the ±K valleys (the local minimum and maximum in the conduction and valence band, respectively) can be selectively addressed with circularly polarized light, which has subsequently opened the door to the pursuit of valleytronic devices 4 , where the valley degree of freedom is used to carry information.2D materials have a lot to offer in terms of optoelectronics applications, and in a wide range of wavelengths -from the microwave to the visible. Tony Low, Frank Koppens and colleagues review the field of polaritonics in layered 2D materials on page 182 of this issue. Graphene provides a solid alternative to metal plasmonics, due to the combination of high intrinsic mobilities (manifested when encapsulated in hexagonal boron nitride) with tunable carrier density (and therefore wavelength range). However, TMDs (in particular MoS 2 ) can exhibit much larger light confinement -about an order of magnitude higher than graphene. Hexagonal boron nitride (h-BN) is also a lot more than an ideal dielectric; its in-plane anisotropy renders it naturally hyperbolic (the principal components of the dielectric tensor have opposite signs). Hyperbolic phononpolaritons do not suffer from losses and, although their lifetimes in multi-layered h-BN are comparable to those of optical phonons, the slow group velocity limits the overall propagation length. Theoretical investigations indicate that other 2D materials should also exhibit similar hyperbolic properties.Excitonic effects are also well pronounced in layered materials. Exciton binding energies are about an order of magnitude higher than those of bulk semiconductors, such as Si, Ge and III-V or II-VI alloys, which allows for the direct observation of trions and biexcitons that are hard to see in bulk semiconductors. Exciton-polaritons have been recently observed in 2D materials inserted in microcavities 5,6 , although polariton condensation is still elusive.The latest group of 2D materials to be taking the stage...