2The class of 2D atomic crystals 1 , which started with graphene 2 now includes a large variety of materials. However, the real diversity can be achieved if one starts to combine several such crystals in van der Waals heterostructures 3,8 . Most attractive and powerful is the idea of band-structure engineering, where by combining several different 2D crystals one can create a designer potential landscape for electrons to live in. Rendering the band-structure with atomic precision allows tunnel barriers, QWs and other devices, based on the broad choice of 2D materials.Such band-structure engineering has previously been exploited to create LEDs and lasers based on semiconductor heterostructures grown by molecular beam epitaxy 9 . Here we demonstrate that using graphene as a transparent conductive layer, hBN as tunnel barriers and different transition metal dichalcogenides (TMDC) 1,10 as the materials for QWs, we can create efficient LEDs; Fig. 1F. In our devices, electrons and holes are injected to a layer of TMDC from the two graphene electrodes.Because of the long lifetime of the quasiparticles in the QWs (determined by the height and thickness of the neighbouring hBN barriers), electrons and holes recombine, emitting a photon. The emission wavelength can be fine-tuned by the appropriate selection of TMDC and quantum efficiency (QE) can be enhanced by using multiple QWs (MQWs).We chose TMDC because of wide choice of such materials and the fact that monolayers of many TMDC are direct band gap semiconductors [11][12][13][14][15] . Until now, electroluminescence (EL) in TMDC devices has been reported only for lateral monolayer devices and attributed to thermally assisted processes arising from impact ionization across a Schottky barrier 16 and formation of p-n junctions 15,17,18 /hBN. (H-J) Band diagrams for the case of zero applied bias (H), intermediate applied bias (I) and high bias (J) for heterostructure presented in (G). 4For brevity we concentrate on current-voltage (I-V) characteristics, photoluminescence (PL) and EL spectra from symmetric devices based on MoS 2 , Fig At low V b , the PL in Fig. 2A is dominated by the neutral A exciton, X 0 , peak 12 at 1.93 eV. We attribute the two weaker and broader peaks at 1.87 and 1.79 eV to bound excitons 22,23 . At certain V b , the PL spectrum changes abruptly with another peak emerging at 1.90 eV. This transition is correlated with an increase in the differential conductivity ( Fig. 2A). We explain this transition as being due to the fact that at this voltage the Fermi level in Gr B rises above the conduction band in MoS 2 , allowing injection of electrons into the QW (Fig. 1I). This allows us to determine the band alignment between In contrast to PL, EL starts only at V b above a certain threshold, Figs. 2B. We associate such behaviour with the Fermi level of Gr T being brought below the edge of the valence band so that holes can be injected to MoS 2 from Gr T (in addition to electrons already injected from Gr B ) as sketched in Fig. 1J. This creates con...

Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in the absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological currents originating from graphene's two valleys are predicted to flow in opposite directions and combine to produce long-range charge neutral flow. We observed this effect as a nonlocal voltage at zero magnetic field in a narrow energy range near Dirac points at distances as large as several micrometers away from the nominal current path. Locally, topological currents are comparable in strength with the applied current, indicating large valley-Hall angles. The long-range character of topological currents and their transistor-like control by means of gate voltage can be exploited for information processing based on valley degrees of freedom.

Exploiting the properties of two-dimensional crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate. Solution processing of graphene allows simple and low-cost techniques such as inkjet printing to be used for device fabrication. However, the available printable formulations are still far from ideal as they are either based on toxic solvents, have low concentration, or require time-consuming and expensive processing. In addition, none is suitable for thin-film heterostructure fabrication due to the re-mixing of different two-dimensional crystals leading to uncontrolled interfaces and poor device performance. Here, we show a general approach to achieve inkjet-printable, water-based, two-dimensional crystal formulations, which also provide optimal film formation for multi-stack fabrication. We show examples of all-inkjet-printed heterostructures, such as large-area arrays of photosensors on plastic and paper and programmable logic memory devices. Finally, in vitro dose-escalation cytotoxicity assays confirm the biocompatibility of the inks, extending their possible use to biomedical applications.

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulfides and hBN are found to exhibit consistently high carrier mobilities of about 60 000 cm(2) V(-1) s(-1). In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide, and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ∼1000 cm(2) V(-1) s(-1). We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN, and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.

Layered materials can be assembled vertically to fabricate a new class of van der Waals heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for control of light–matter coupling. Here, we incorporate molybdenum diselenide/hexagonal boron nitride (MoSe2/hBN) quantum wells in a tunable optical microcavity. Part-light–part-matter polariton eigenstates are observed as a result of the strong coupling between MoSe2 excitons and cavity photons, evidenced from a clear anticrossing between the neutral exciton and the cavity modes with a splitting of 20 meV for a single MoSe2 monolayer, enhanced to 29 meV in MoSe2/hBN/MoSe2 double-quantum wells. The splitting at resonance provides an estimate of the exciton radiative lifetime of 0.4 ps. Our results pave the way for room-temperature polaritonic devices based on multiple-quantum-well van der Waals heterostructures, where polariton condensation and electrical polariton injection through the incorporation of graphene contacts may be realized.