Exciton structure in optical absorption of SnO2 crystals

Nagasawa, Michitaro; Shionoya, Shigeo

doi:10.1016/0031-9163(66)91202-9

Cited by 60 publications

(27 citation statements)

References 6 publications

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“…The corresponding fundamental gap is obtained by adding the exciton binding energy of ∼ 30 meV. 10,21,25 Our calculated HSE03+G 0 W 0 gap of 3.65 eV is in very good agreement with the resulting ∼ 3.59 eV.…”

Section: Electronic Structuresupporting

confidence: 68%

“…13,14,21 Accordingly, the respective onsets in single-photon optical absorption experiments are weak. [21][22][23][24][25] Despite the relatively small absorption coefficients, these experiments have revealed the polarization dependence of the onsets. While the transitions are dipole-forbidden in single-photon absorption, they are allowed in two-photon absorption, and the measured value of 3.6 eV 10,26 is now widely accepted as the band gap of SnO 2 .…”

Section: Introductionmentioning

confidence: 99%

“…If the exciton derives from the band edges, the optical and the fundamental gap differ by the exciton binding energy, which is on the order of 30 meV in SnO 2 . 10,21,25 A measurement of the fundamental gap by direct and inverse photoemission spectroscopy (PES and IPES, respectively) has, to our knowledge, not been reported yet. It is also unlikely that the combination of PES and IPES would reach the accuracy to resolve a 30 meV difference in the two band gaps.…”

Section: Introductionmentioning

confidence: 99%

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Tin dioxide from first principles: Quasiparticle electronic states and optical properties

et al. 2011

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The structural, electronic, and optical properties of the semiconducting oxide SnO 2 are investigated using first-principles calculations. We employ the G 0 W 0 formalism based on hybrid-functional calculations to compute the quasiparticle band structure and density of states for which we find good agreement with results from photoemission and two-photon absorption experiments. We also address open questions regarding the band ordering and band symmetries. In a second step we use our electronic structure as a starting point to calculate optical spectra by solving the Bethe-Salpeter equation including the electron-hole interaction. The dielectric tensor is predicted for a wide range of photon energies. Our results resolve the long-standing discrepancy between theory and experiment on the highly anisotropic onsets of absorption. The anisotropy can be explained in terms of dipole-allowed direct transitions in the vicinity of the valence-band maximum without having to invoke lower lying valence bands.

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Section: Electronic Structuresupporting

confidence: 68%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Tin dioxide from first principles: Quasiparticle electronic states and optical properties

et al. 2011

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“…(1) since SnO 2 is a direct-forbidden transition semiconductor. 34,35) The bandgaps of the as-prepared and annealed SnO x :F y lms were estimated from the intersections of the dashed lines to be 3.44 and 3.49 eV, respectively. Figure 7(a) shows optical transmittance spectra of the SnO x :F y lms grown on SiO 2 glass substrates.…”

Section: Sno X :F Y Lmsmentioning

confidence: 99%

Microstructures and Optical Properties of Silicon Spheres for Solar Cells

et al. 2016

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2Clean Venture 21 Corporation, Japan Silicon (Si) spheres were prepared by a powder melting method, and their microstructures and optical properties were investigated. The lattice constant of the Si spheres increased upon phosphorus (P) diffusion, compared to that before P diffusion. This was attributed to the presence of interstitial P atoms. A uorine-doped tin oxide (SnO x :F y ) anti-re ection lm was then coated on the surface of the Si spheres. Changes in the lattice constant and bandgap of the SnO x :F y lm occurred upon subsequent annealing. This was attributed to changes in the composition of the SnO x :F y lm.

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“…Interprétation. - [IO], [Il], [12], [13], [14], [15] mais elles sont réparties sur une large gamme, vraisemblablement à cause des propriétés extrinsèques des cristaux utilisés. Nous avons adopté la valeur expérimentale moyenne la plus probable de 3,8 eV.…”

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PROPRIÉTÉS OPTIQUES DU SnO₂ ET DU β-PbO₂ INTRINSÈQUES AU VOISINAGE DU GAP

Jacquemin¹

1974

J. Phys. Colloques

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Jusqu'à ce jour, les nombreuses mesures optiques réalisées sur le Sn02 laissaient apparaître d'importants désaccords sur les interprétations possibles. Aussi le support d'un calcul de structure de bande est apparu nécessaire pour tenter de faire une synthèse de tous les résultats expérimentaux. Les structures de bande des dioxydes tétragonaux Sn02 et B-Pb02 que nous avons calculées par la méthode KKR sont, à notre connaissance, les premières structures de bande publiées sur les deux corps.Pour le Sn02, le maximum de la bande de valence et le minimum de la bande de conduction sont en r ( k = O) et laissent prévoir une transition directe en ce point de la zone de Brillouin. D'autre part, la présence des niveaux T : et au sommet de la bande de valence, et du niveau r: au bas de la bande de conduction confirme la présence du dichroïsme déjà observé dans le SnOz. Ces résultats théoriques sont également en accord avec le fait que la transition E I C est de plus faible

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Exciton structure in optical absorption of SnO2 crystals

Cited by 60 publications

References 6 publications

Tin dioxide from first principles: Quasiparticle electronic states and optical properties

Tin dioxide from first principles: Quasiparticle electronic states and optical properties

Microstructures and Optical Properties of Silicon Spheres for Solar Cells

PROPRIÉTÉS OPTIQUES DU SnO₂ ET DU β-PbO₂ INTRINSÈQUES AU VOISINAGE DU GAP

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Exciton structure in optical absorption of SnO2 crystals

Cited by 60 publications

References 6 publications

Tin dioxide from first principles: Quasiparticle electronic states and optical properties

Tin dioxide from first principles: Quasiparticle electronic states and optical properties

Microstructures and Optical Properties of Silicon Spheres for Solar Cells

PROPRIÉTÉS OPTIQUES DU SnO2 ET DU β-PbO2 INTRINSÈQUES AU VOISINAGE DU GAP

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PROPRIÉTÉS OPTIQUES DU SnO₂ ET DU β-PbO₂ INTRINSÈQUES AU VOISINAGE DU GAP