Exciton thermalization in quantum-well structures

Gurioli, Massimo; Vinattieri, A.; Martı́nez-Pastor, J.; Colocci, M.

doi:10.1103/physrevb.50.11817

Cited by 99 publications

(96 citation statements)

References 25 publications

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“…Other parameters/variables not shown in Fig.1 also play a role, e.g. the spectral meandering induced by the local electric fields associated with free charges, the coupling to phonons and the carriers relaxation times if a perfect thermalization is not allowed [15,16,17,18].…”

Section: Introductionmentioning

confidence: 99%

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

Dimastrodonato

Mereni

Young

et al. 2010

Journal of Crystal Growth

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We present in this work a simple Quantum Well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a MetalOrganic Vapour Phase Epitaxy system.Comparisons between two different commercially available purifiers are based on the analysis of low temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (100). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1ppb level are needed to achieve high quality quantum well growth.

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Section: Introductionmentioning

confidence: 99%

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

Dimastrodonato

Mereni

Young

et al. 2010

Journal of Crystal Growth

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“…density of states above the mobility edge. This temperature difference is due to non-complete thermalization of photoexcited carriers with the lattice during their lifetime, which is relevant at low temperatures when LO-phonons are not significantly occupied, and carrier-carrier scattering can still provide a thermalization of the mobile carriers 56 . With increasing temperature the phonon-scattering rate increases, resulting in a thermal carrier distribution above 130K as seen by the essentially temperature independent retrieved ODOS.…”

Section: A Optical Characterization Of Polytype Wz/zb Inp Nwsmentioning

confidence: 99%

Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires

et al. 2017

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“…In a related study of electron localization in Ga 1−x In x As 1−y N y quantum wells, we have recently observed that the effective temperature of imperfectly thermalized carriers is indeed higher the lattice temperature (22). The concept of an effective electron temperature for localized carriers in disordered quantum wells was previously proposed in the paper by Gurioli, et al (14) and further discussed by Runge(12) (section 12a). Runge and coworkers (12) have also used the equilibrium distribution with an effective temperature to describe the results of their simulations of the distribution of partially localized excitons.…”

Section: B Physical Basis For the Modelmentioning

confidence: 77%

“…We show that this is easily achieved by extending the carrier thermalization model (14) for Stokes' shift in mismatched alloy quantum wells. A qualitative description(5; 11) of the picture already exists in literature.…”

Section: Introductionmentioning

confidence: 94%

A model for the temperature dependence of photoluminescence from self-assembled quantum dots

Bansal

2006

Journal of Applied Physics

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Photo-excited carriers, distributed among the localized states of self-assembled quantum dots, often show very anomalous temperature dependent photoluminescence characteristics. The temperature dependence of the peak emission energy may be non-monotonic and the emission linewidth can get narrower with increasing temperature. This paper describes a quasi-thermodynamic model that naturally explains these observations. Specifically, we introduce a temperature dependent function to parameterize the degree of thermalization of carriers. This function allows us to continuously interpolate between the well-defined low and high temperature limits of the carrier distribution function and describe the observed anomalies in the photoluminescence spectra with just two fitting parameters. We show that the description is equivalent to assuming that the partially thermalized carriers continue to be described by equilibrium statistics, but with a higher effective temperature. Our treatment of the problem is computationally simpler than the usually employed rate equations based analyses [e.g. Sanguinetti, et al. Phys. Rev. B 60, 8276 (1999)], which typically also have many more under-determined fitting parameters. The model is extended to quantum dots with a bimodal size distribution.

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Exciton thermalization in quantum-well structures

Cited by 99 publications

References 25 publications

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires

A model for the temperature dependence of photoluminescence from self-assembled quantum dots

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