Exciton transfer in quantum well structures

Goede, O.; Heimbrodt, W.; Hieke, K.; Gumlich, H.‐E.; Pier, Th.; Lunn, B.; Ashenford, D.E.; Jackson, S.; Nicholls, J.E.

doi:10.1016/0749-6036(92)90283-b

Cited by 15 publications

(8 citation statements)

References 5 publications

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“…Identical PL rise (and decay) kinetics are observed for these three different excitation conditions. We have not observed a delayed PL rise of about 100 ps, as reported previously by Goede et al [2]. Moreover, the PL rise and decay times are identical to those observed under the resonant HH FE 10 nm QW excitation.…”

Section: Evidence For the Inter-qw Exciton Transfersupporting

confidence: 71%

“…The transfer process is explained by quantum tunneling transitions [1], which, however, are not efficient for barriers wider than about 4 nm [1] or 6-10 nm [2]. In this work we report the puzzling observation of a very efficient and fast (20-30 ps or faster) inter-QW exciton transfer in CdTe/CdMnTe multiple QW (MQW) structures with 10% or 30% Mn fractions in the 50 nm thick CdMnTe barriers.…”

Section: Introductionmentioning

confidence: 81%

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Exciton Transfer in Multiple Quantum Well Structures of CdTe/CdMnTe Grown by Molecular Beam Epitaxy

et al. 1997

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The direct evidence for the efficient transfer of excitons from 4 nm and 6 nm to 10 nm wide CdTe quantum wells is presented based on the results of photoluminescence and photoluminescence excitation investigation. Efficient transfer is observed for quantum wells separated by thick (50 nm) CdMnTe barriers containing 10% or 30% Mn fraction. A new mechanism of the transfer is proposed, which involves long range dynamic magnetic interactions between free/bound excitons and Mn ions in the CdMnTe barrier regions of the structure.

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Section: Evidence For the Inter-qw Exciton Transfersupporting

confidence: 71%

Section: Introductionmentioning

confidence: 81%

Exciton Transfer in Multiple Quantum Well Structures of CdTe/CdMnTe Grown by Molecular Beam Epitaxy

et al. 1997

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“…This type of material allows to manipulate the shape of the barrier and observe magnetically tuned interwell coupling [1] or exciton transfer [2]. In the present paper we show results of magnetophotoluminescence experiments done on a new type of structures: CdTe/CdMgTe ADQW with a two-dimensional electron gas (2DEG).…”

Section: Introductionmentioning

confidence: 91%

Photoluminescence of CdTe/CdMgTe Double Quantum Wells with a Two-Dimensional Electron Gas

et al. 2017

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Magnetophotoluminescence measurements at liquid helium temperatures were carried out on asymmetric double quantum wells based on CdTe/CdMgTe heterostructures. Due to doping with shallow iodine donors, a twodimensional electron gas was present in the quantum wells. The samples studied differed with the quantum well widths and doping level. We show a resemblance of the luminescence to results obtained on single quantum wells which suggests that in samples studied the quantum wells are not strongly coupled.

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“…Hf; 78.20.Ls, 78.47.+pa Semimagnetic semiconductors are of great interest because of their novel properties [1]. In particular, the strong interaction between the spins of carriers and the magnetic ions leads to giant magnetooptical effects such as extremely large Zeeman splittings.In contrast to previous studies of Mn-based asymmetric double quantum wells (ADQWs) where the quantum wells (QW) were made of CdTe [2,3], in our system the wide well (WW) contains Mn, so as to increase drastically the influence of a magnetic field on the confined levels [4].In this report we will present steady-state and time-resolved experiments at zero tesla, focusing on the influence of the tunnel barrier thickness on the tunneling.The samples were grown by molecular beam epitaxy in the (100) direction. The stuctures were deposited on a CdMnTe buffer layer of the same Mn concentration as the barriers.…”

mentioning

confidence: 91%

“…In contrast to previous studies of Mn-based asymmetric double quantum wells (ADQWs) where the quantum wells (QW) were made of CdTe [2,3], in our system the wide well (WW) contains Mn, so as to increase drastically the influence of a magnetic field on the confined levels [4].…”

mentioning

confidence: 94%

Optical Study of an Asymmetric Double Quantum Well System: CdTe/CdMnTe

Lawrence¹,

Feuilet²,

Tuffigo³

et al. 1993

Acta Phys. Pol. A

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Carrier tunneling through CdMnTe barriers of different thicknesses is investigated in CdTe/CdMnTe asymmetric double quantum wells. Steady-state photoluminescence at 1.8 K and time-resolved photoluminescence experiments between 10 K and 50 K were performed.PACS numbers: 78.66. Hf; 78.20.Ls, 78.47.+pa Semimagnetic semiconductors are of great interest because of their novel properties [1]. In particular, the strong interaction between the spins of carriers and the magnetic ions leads to giant magnetooptical effects such as extremely large Zeeman splittings.In contrast to previous studies of Mn-based asymmetric double quantum wells (ADQWs) where the quantum wells (QW) were made of CdTe [2,3], in our system the wide well (WW) contains Mn, so as to increase drastically the influence of a magnetic field on the confined levels [4].In this report we will present steady-state and time-resolved experiments at zero tesla, focusing on the influence of the tunnel barrier thickness on the tunneling.The samples were grown by molecular beam epitaxy in the (100) direction. The stuctures were deposited on a CdMnTe buffer layer of the same Mn concentration as the barriers. Table compiles for the samples the Mn concentrations (of the barriers (xΒ), of the WW (xW)), and the thicknesses measured by Reflection High Energy Electron Diffraction (RHEED) oscillations (WW (LW), narrow well (LN), tunnel barrier (LB)).The photoluminescence (PL) spectra are depicted in Fig. 1. The emission of the fundamental excitons of both QWs is observed: e1Nhh1N at lower energy and e1Whh1W at higher energy. The labels hh 1 N (hh1W) mean the first heavy hole level in the narrow CdTe (wide,CdMnTe) QW. Note that because the gap increases with the Mn content, the WW luminescence appears at higher energy. The relative intensity of their luminescence (R = IW/IN) reflects the strength of the coupling. The observed increase in R when LB increases indicates a less efficient tunneling (637)

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Exciton transfer in quantum well structures

Cited by 15 publications

References 5 publications

Exciton Transfer in Multiple Quantum Well Structures of CdTe/CdMnTe Grown by Molecular Beam Epitaxy

Exciton Transfer in Multiple Quantum Well Structures of CdTe/CdMnTe Grown by Molecular Beam Epitaxy

Photoluminescence of CdTe/CdMgTe Double Quantum Wells with a Two-Dimensional Electron Gas

Optical Study of an Asymmetric Double Quantum Well System: CdTe/CdMnTe

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