We have fabricated field effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing hydroxamic acid functionality. The functionalized nanotubes bind strongly to basic metal oxide surfaces, but not to silicon dioxide. Upon annealing, the functionalization is removed, restoring the electronic properties of the nanotubes. The devices we have fabricated show excellent electrical characteristics.One-dimensional nanostructures, such as nanowires [1] and carbon nanotubes [2,3] (CNTs) have excellent electrical properties making them attractive for applications in nanotechnology [4,5,6,7]. Semiconducting nanotubes, in particular, are receiving considerable attention due to their very promising performance as channels of field effect transistors (FETs) [8,9,10,11,12]. However, in order for the large-scale integration of CNTs in electronics to take place, many challenges must be overcome. One particularly important problem is selectively positioning CNTs on a substrate. Although considerable progress has been made for nanoclusters [13,14,15] and nanowires [16,17,18] it remains a difficult task for CNTs. Several approaches have been demonstrated based on the chemical patterning of the substrate (typically SiO2) [19,20,21]. In these approaches surfaces are patterned with molecules that either promote or prevent nanotube adhesion. For example, amine-terminated compounds have been shown to enhance nanotube binding while hydrophobic compounds prevent it [22]. Nevertheless, these methods remain unsatisfactory because of the adverse influence of the functionalization on the electrical performance of the devices.Here we propose a new approach that allows to selectively position CNTs based on their functionalization rather than the modification of the substrate. The complete fabrication sequence of chemical functionalization, selective placement, fabrication of multiple devices and defunctionalization is demostrated. High-performance devices can thus be directly assembled. Specifically, we covalently bound molecules to the CNTs that contain the hydroxamic acid functionality (Fig. 1). The functionalized tubes bind strongly to Al2O3 (and other basic metal oxides), but not to SiO2. Upon heating to 600 • C, the functionalization is removed, and the electrical properties of the tube are restored. We exploited the selective bonding to position nanotubes at precise locations on a SiO2 substrate patterned with Al2O3. Using this approach we fabricated FETs with high yield and excellent electrical properties.Our functionalization strategy is based on the reaction * Electronic address: klinke@chemie.uni-hamburg.de; Present address: