Excitonic emissions from CuInSe2 on GaAs(001) grown by molecular beam epitaxy

Niki, Shigeru; Shibata, Hajime; Fons, Paul; Yamada, A.; Obara, Akira; Makita, Yunosuke; Kurafuji, T.; Chichibu, S. F.; Nakanishi, H.

doi:10.1063/1.114400

Cited by 52 publications

(19 citation statements)

References 2 publications

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“…The RF spectrum reveals two prominent resonances, associated with the A and B free excitons, confirming that the lines at 1.0417 eV and 1.0453 eV in the PL spectra are related to the A and B free excitons, respectively. 7,8 The A exciton energy, determined in this paper ͑1.0417 eV͒, is very close to that reported by Chatrophorn et al 7 for single crystals ͑1.0418 eV͒ but higher then the values measured by Schön et al 6 for single crystals ͑1.0406 eV͒ and Niki et al 5 for epitaxial layers ͑1.0386 eV͒. The difference can be explained by the influence of intrinsic defects due to deviations from the ideal stoichiometry 19 and strain in the epitaxial layer due to a mismatch in the CuInSe 2 and GaAs lattice parameters.…”

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confidence: 73%

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Excited states of the free excitons in CuInSe2 single crystals

Yakushev

Luckert

Faugeras

et al. 2010

Applied Physics Letters

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High-quality CuInSe2 single crystals were studied using polarization resolved photoluminescence (PL) and magnetophotoluminescence (MPL). The emission lines related to the first (n=2) excited states for the A and B free excitons were observed in the PL and MPL spectra at 1.0481 meV and 1.0516 meV, respectively. The spectral positions of these lines were used to estimate accurate values for the A and B exciton binding energies (8.5 meV and 8.4 meV, respectively), Bohr radii (7.5 nm), band gaps (E-g(A)=1.050 eV and E-g(B)=1.054 eV), and the static dielectric constant (11.3) assuming the hydrogenic model

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confidence: 73%

“…3 Despite many studies of the optical properties of CuInSe 2 dating back nearly 40 years 4 only very few reports suggest resolution of the A and B free excitonic states. [5][6][7][8] No reliable information on their excited states has yet been reported and therefore the band-gap cannot be considered to be accurately known.…”

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confidence: 99%

Excited states of the free excitons in CuInSe2 single crystals

Yakushev

Luckert

Faugeras

et al. 2010

Applied Physics Letters

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“…Note the ~10 meV discrepancy between this value for the bandgap at absolute zero temperature and that discussed earlier in this section [86].…”

Section: Optical Properties Of Ternary Cu-iii-vi Materialsmentioning

confidence: 70%

“…The most recent published study of radiative recombination in nearstoichiometric CuInSe2 epilayers on GaAs yields a value for the fundamental absorption edge of Eg = 1.046 eV at a temperature of 2 K, with a slight increase to a value of Eg = 1.048 eV at a temperature of 102 K [86]. Near room temperature, however, the temperature dependence follows the Varshni relation [87]:…”

Section: Optical Properties Of Ternary Cu-iii-vi Materialsmentioning

confidence: 99%

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Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

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This project was initiated after the Boeing Company decided to terminate its photovoltaic research and development efforts, and donated some research equipment to UF. Billy Stanbery, who was part of the Boeing team, decided then to enroll at UF to pursue a Ph.D degree. As such these events constituted a rare direct technology transfer from industry to a university. This helped to preserve more than the published legacy of the solar cell efforts at Boeing, and jump-started a comprehensive, multifaceted, and multidisciplinary copper indium diselenide solar cell research effort at UF. 5-15 Micro-Raman scattering spectra of islands on two indium-rich CIS films grown on GaAs (100). The uppermost curve is from an island "pool" on a sodium-dosed film and the lower two are single and averaged spectra from isolated islands on the sample without sodium shown in Figure 5- field. It focused primarily on the physical and opto-electronic properties of the general class of I-III-VI2 and II-IV-V2 compound semiconductors. More recent reviews specifically oriented towards CIS materials and electronic properties [2][3][4][5][6] are also recommended reading for those seeking to familiarize themselves with key research results in this field.There are also a number of excellent books and reviews on photovoltaic device physics [7,8], on the general subject of solar cells and their applications [9,10], and others specifically oriented towards thin-film solar cells [11,12] Researchers have not always been careful to reserve the use of the compound designation CuInSe2 for single-phase material of the designated stoichiometry, an imprecision that is understandable in view of the difficulty in discriminating CuInSe2 from some other compounds in this material system, as will be discussed in detail elsewhere in this treatise. The compound designations such as CuInSe2 will be reserved herein for reference to single-phase material of finite solid solution extent, and multiphasic or materials of indeterminate structure composed of copper, indium, and selenium will be referred to by the customary acronym, in this case CIS. 3 This review begins with an overview of the physical properties of the principal copper ternary chalcogenides utilized for PV devices, including their thermochemistry, crystallography, and opto-electronic properties. All state-ofthe-art devices rely on alloys of these ternary compounds and employ alkali impurities, so the physical properties and effects of these additives will be presented, with an emphasis on their relevance to electronic carrier transport properties. This foundation will provide a basis from which to address the additional complexities and variability resulting from the plethora of materials processing methods and device structures which have been successfully employed to fabricate high efficiency PV devices utilizing absorbers belonging to this class of materials. Phase Chemistry of Cu-III-VI Material SystemsSignificant technological applications exist for Ag-III-VI2 compounds as non-linear optical mat...

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