Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Rosales, Daniel; Bretagnon, Thierry; Gil, Bernard; Kahouli, A.; Brault, J.; Damilano, B.; Massies, J.; Durnev, M. V.; Kavokin, A. V.

doi:10.1103/physrevb.88.125437

Cited by 53 publications

(63 citation statements)

References 34 publications

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“…6 From this point of view, homoepitaxial Si-doped GaN layers grown on semi-polar planes can be more favorable assuming lower density of structural defects, in particular, SFs. SFs of different geometries can sometimes be optically active and may lead to several features in the luminescence spectra in the region of 3.29-3.41 eV as was reported for the heteroepitaxial undoped GaN grown in a-and m-directions.…”

mentioning

confidence: 99%

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

Khromov

Ḿonemar

Avrutin

et al. 2013

Applied Physics Letters

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Si-doped GaN layers grown by metal organic vapor phase epitaxy on m-plane GaN substrates were investigated by low-temperature cathodoluminescence (CL). We have observed stacking fault (SF) related emission in the range of 3.29–3.42 eV for samples with moderate doping, while for the layers with high concentration of dopants, no CL lines related to SFs have been noted. Perturbation of the SF potential profile by neighboring impurity atoms can explain localization of excitons at SFs, while this effect would vanish at high doping levels due to screening

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mentioning

confidence: 99%

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

Khromov

Ḿonemar

Avrutin

et al. 2013

Applied Physics Letters

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“…22 In the case of a GaN deposited amount of 16 MLs (sp-GaN-16), the QDs are coalesced along <1 1 00> forming QWRs. 15,16 From both series of samples, the nanostructure density and surface coverage have been found to increase when the GaN deposited amount is increased (from densities in the 10 10 cm -2 range up to a few 10 11 cm -2 ). To investigate the morphology of GaN nanostructures buried in Al 0.5 Ga 0.5 N, TEM measurements have also been performed.…”

Section: Resultsmentioning

confidence: 93%

“…15 In both cases, the typical nanostructure width is found between 15 and 25 nm. As the GaN deposited amount is increased, the nanostructure height varies between 3 to 5 nm and 1 to 4 nm in the polar 21 and semipolar case, 16 respectively. Next, the PL properties of the nanostructures have been studied as a function of temperature, and compared to reference structures made of QWs ( figure 6).…”

Section: Resultsmentioning

confidence: 98%

“…13,14,15 Furthermore, we have demonstrated that the nanostructure design leads to particular optical properties (emitted wavelength range, temperature dependence, system dimensionality etc.). 14,16 In this paper, the formation, morphological and optical properties of (0001) "polar" and (11 2 2) "semipolar" GaN nanostructures will be presented and compared, using different experimental techniques. In particular, the influence of the internal electric field in the structures will be discussed.…”

Section: Introductionmentioning

confidence: 99%

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Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

et al. 2014

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Al,Ga)N light emitting diodes (LEDs), emitting over a large spectral range from 360 nm (GaN) down to 210 nm (AlN), have been successfully fabricated over the last decade. Clear advantages compared to the traditional mercury lamp technology (e.g. compactness, low-power operation, lifetime) have been demonstrated. However, LED efficiencies still need to be improved. The main problems are related to the structural quality and the p-type doping efficiency of (Al,Ga)N. Among the current approaches, GaN nanostructures, which confine carriers along both the growth direction and the growth plane, are seen as a solution for improving the radiative recombination efficiency by strongly reducing the impact of surrounding defects. Our approach, based on a 2D -3D growth mode transition in molecular beam epitaxy, can lead to the spontaneous formation of GaN nanostructures on (Al,Ga)N over a broad range of Al compositions. Furthermore, the versatility of the process makes it possible to fabricate nanostructures on both (0001) oriented "polar" and (11 2 2) oriented "semipolar" materials. We show that the change in the crystal orientation has a strong impact on the morphological and optical properties of the nanostructures. The influence of growth conditions are also investigated by combining microscopy (SEM, TEM) and photoluminescence techniques. Finally, their potential as UV emitters will be discussed and the performances of GaN / (Al,Ga)N nanostructure-based LED demonstrators are presented.

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“…Since photons have very low momentum, emission of light by moving particle is suppressed by momentum conservation rule. The dependence of an average momentum and a radiative lifetime for n-dimensional objects should be proportional to T n/2 [10]. For 0-dimensional structures (localized particles), radiative recombination time should be constant [11], whereas for quantum wells linear dependence between radiative recombination time and temperature takes place.…”

Section: Theorymentioning

confidence: 99%

A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations

et al. 2016

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The potential fluctuations in III-nitride quantum wells lead to many effects like emission broadening and S-shape energy vs. temperature dependence. The best description of the energy dependence comes from calculations based on Gaussian density of states. However, in most of the published reports, changes of carrier lifetime with energy and temperature are not taken into account. Since experimental evidence shows that lifetime significantly depends on energy and temperature, here we propose a model that describes two basic parameters of luminescence: lifetime of carries and emission energy as a function of temperature in the case of quantum wells and layers that are characterized by potential fluctuations. Comparison of the measured energy and lifetime dependences on temperature in specially grown InGaN/GaN quantum wells and InAlGaN layer shows very good agreement with the proposed theoretical approach.

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Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Cited by 53 publications

References 34 publications

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations

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