Exemplified calculation of stress migration in a 90nm node via structure

Weide‐Zaage, Kirsten

doi:10.1109/esime.2010.5464542

Cited by 18 publications

(2 citation statements)

References 22 publications

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“…The program allows the simulation of current density, temperature gradients and mechanical stress distributions in the metallization structures. For the calculations of mass fluxes and mass flux divergences, a user routine described in [2] was used.…”

Section: Simulation Procedures and Model Descriptionmentioning

confidence: 99%

Underfill and mold compound influence on PoP aging under high current and high temperature stress

Meinshausen

Weide‐Zaage

Frémont

2010

3rd Electronics System Integration Technology Conference ESTC

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In consequence of the general densification of electronic components, the stress being submitted to the packages aggravates while the size of the internal interconnections shrinks. Against the background of an increasing reliability issue, this paper focuses on reliability aspects within PoP assemblies, submitted to high current and mechanical stress conditions. The role of underfill and molding compound (MC) on temperature management, migration phenomena and stress reduction in a ball grid array (BGA) was investigated. Therefore, thermal-electrical-mechanical finite element simulations were conducted using ANSYS ® and a model of a bump chain being common for PoP structures. With the results, migration mechanisms like electro-or thermo-induced migration in bumps were calculated.

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Section: Simulation Procedures and Model Descriptionmentioning

confidence: 99%

Underfill and mold compound influence on PoP aging under high current and high temperature stress

Meinshausen

Weide‐Zaage

Frémont

2010

3rd Electronics System Integration Technology Conference ESTC

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“…The mechanical and electrical material properties used in the simulations are given in Table 1. The material data were taken from literature or measurements of earlier investigations [2,3]. The geometrical data were taken partly from [4,5].…”

Section: Introductionmentioning

confidence: 99%

Simulation of μ-Bump and TSV in 3-D Integration

Weide‐Zaage

Moujbani²

2015

IJEPR

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The reduction of package and chip size by the need of cost reduction on one hand and the need of high voltage metallization on chip for power applications on the other hand the thermal electrical-mechanical management concerning the reliability becomes more and more critical. Breakdown failures due to mechanical stress, moisture uptake, migration effects caused by current crowding, temperature gradients due to Joule heating and stress gradients and intermetallic phase growth have an increasing importance. With the help of simulations the weakest links as well as locations with high thermal electrical and mechanical loads can be determined. This will be shown for selected examples.

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