“…Theoretical and experimental studies showed the possibility of tailoring the properties of these materials by different stimuli. As an example, pressure-driven compression has been reported to change the magnetic properties, as well as to cause transitions from a semiconductor to a metal in MnPS 3 and MnPSe 3 . , Moreover, several TEM studies ,,, on few-layer TMPTs proved that few-layer TMPTs can be successfully prepared. Furthermore, strong modifications of the structure and properties of few-layer transition metal phosphorus trisulfides caused by electron irradiation were reported. ,, A predominant removal of sulfur in few-layer TMPTs by electron irradiation in the low-voltage regime (i.e., 30–80 kV) in TEM was observed. ,, Calculations revealed that the elastic knock-on displacement threshold of S is significantly lower compared to, for instance, MoS 2 or MoSe 2 . , Thus, elastic damage plays a significant role in investigating transition metal phosphorus trisulfides in TEM above 50 kV. , Further, inelastic damage channels cause the primary removal of S in TMPTs as well below the knock on threshold .…”