Exfoliated and bulk β-gallium oxide electronic and photonic devices

Pearton, S. J.; Oh, Sangwoo; Kim, Suyeon S; Kim, Jihyun; Ren, F.

doi:10.1016/j.sctalk.2022.100001

Cited by 10 publications

(3 citation statements)

References 28 publications

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“…complexes? (131)(132)(133)(134)(135) e) are there any Ga2O3 device specifications (e.g., the electric field profile, contact metal) that act as "predictors" of more severe radiation effects? f) does electrical aging increase susceptibility to radiation-induced failure in Ga2O3?…”

Section: Discussionmentioning

confidence: 99%

(Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga₂O₃

Xia¹,

Li²,

Sharma³

et al. 2022

ECS Trans.

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Ga2O3 is expected to show similar radiation resistance as GaN and SiC, considering their average bond strengths. However, this is not enough to explain the orders of magnitude difference of the relative resistance to radiation damage of these materials compared to GaAs and dynamic annealing of defects is much more effective in Ga2O3. Octahedral gallium monovacancies are the main defects produced under most radiation conditions because of the larger cross-section for interaction compared to oxygen vacancies. Proton irradiation introduces two main paramagnetic defects in Ga2O3, which are stable at room temperature. Charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum due to gallium interstitials (Ga i ), vacancies (VGa), and antisites (GaO). With few experimental or simulation studies on single event effects (SEE) in Ga2O3 , it is apparent that while other wide bandgap semiconductors like SiC and GaN are robust against displacement damage and total ionizing dose, they display significant vulnerability to single event effects at high Linear Energy Transfer (LET) and at much lower biases than expected. We have analyzed the transient response of β-Ga2O3 rectifiers to heavy-ion strikes via TCAD simulations. Using field metal rings improves the breakdown voltage and biasing those rings can help control the breakdown voltage. Such biased rings help in the removal of the charge deposited by the ion strike.

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Section: Discussionmentioning

confidence: 99%

(Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga₂O₃

Xia¹,

Li²,

Sharma³

et al. 2022

ECS Trans.

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“…Thus, Ga 2 O 3 homojunctions are currently difficult to fabricate. The barrier at the Schottky junction is formed by a Fermi-level pinning effect due to electronic surface states at the metalsemiconductor (M-S) interface [63][64][65][66], showing the fabrication simplicity. In comparison, the Schottky junction is easier to construct than the semiconductor heterojunction.…”

Section: Introductionmentioning

confidence: 99%

A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes

Liu¹,

Tang²

2023

J. Phys. D: Appl. Phys.

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Deep-ultraviolet (DUV) photodetectors are fundamental building blocks in lots of solid-state DUV optoelectronics, whose prosperity is pinned hope on continuous innovations on semiconductor materials and physics of device structures. Conquering the technological obstacles in narrow bandgap silicon-based optoelectronics (photodetectors and photonics), wide bandgap semiconductor gained a high level of enthusiasm in constructing DUV photodetector, thereinto Ga2O3 is a typical representative benefiting from its promising physical and chemical properties in nature, especially for its energy bandgap around 4.5-5.2 eV for its five phases (α, β, γ, ε and δ). Which just right provides a hard-won opportunity to respond to DUV light irradiation without the need for adjusting the component in compounds and/or adding external optical instruments, as some compound semiconductors AlxGa1-xN, MgxZn1-xO, etc. According to literature reports on Ga2O3-based photodetectors, the device morphology includes metal-semiconductor-metal (MSM) photodetector, homojunction or heterojunction photodetector, phototransistor, and Schottky photodiode. What calls for special attention is that Schottky photodiode with a rectified Schottky junction has certain advantages: easy fabrication, fast photoresponse, less high-temperature diffusion, low dark current, high detectivity, and self-powered operation; in spite of weaknesses of thin depletion layer and low barrier at metal-semiconductor (M-S) interface. Therefore, in this concise literature review article, the recent progresses on Ga2O3-based Schottky photodiodes is discussed in order to show some suggestions on choice of Schottky metal, interfacial barrier modulation, space electric field adjustment, energy band engineering, and photodetection performance improvement, for promoting the further developments of DUV photodetection in the near future.

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“…Вместе с тем следует заметить, что стоимость их остается крайне высокой из-за технологических проблем роста кристаллов при температуре 1800 • C и дорогой оснастки (которая теряет вес в процессе роста), что обусловлено заметной диссоциацией оксида галлия при его нагреве и выделением кислорода, особенно при температурах выше 1200 • C [6]. Не прекращаются попытки получения данного кристалла более экономичным способом, поскольку для создания приборов пригодны даже небольшие фрагменты кристалла, полученные их отслаиванием по плоскостям спайности [7]. В настоящей работе исследован процесс кристаллизации оксида галлия раствор-расплавным методом при температуре 1000−1150 • C. Ранее предпринимались попытки таким путем снизить температуру кристаллизации оксида галлия.…”

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Выращивание монокристаллов β-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- раствор-расплавным методом

Кицай,

Носов,

Чикиряка

et al. 2023

Письма В Журнал Технической Физики

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Исследованы режимы выращивания кристаллов Ga2O3 из раствора оксида галлия в расплаве MoO3 в процессе выпаривания MoO3 при температуре 1050oC. Показано, что при этой температуре кристаллическая фаза Ga2O3 находится в равновесии с расплавом MoO3. В результате экспериментов получены монокристаллы β-Ga2O3 размером до 1.5 mm в поперечном сечении. Состав и структура кристаллов изучены методами рентгеновской дифракции и электронной микроскопии. Ключевые слова: оксид галлия, рост кристаллов, широкозонный полупроводник.

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Exfoliated and bulk β-gallium oxide electronic and photonic devices

Cited by 10 publications

References 28 publications

(Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga₂O₃

(Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga₂O₃

A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes

Выращивание монокристаллов β-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- раствор-расплавным методом

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Exfoliated and bulk β-gallium oxide electronic and photonic devices

Cited by 10 publications

References 28 publications

(Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga2O3

(Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga2O3

A review of Ga2O3 deep-ultraviolet metal–semiconductor Schottky photodiodes

Выращивание монокристаллов &beta;-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- раствор-расплавным методом

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(Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga₂O₃

(Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga₂O₃

A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes

Выращивание монокристаллов β-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- раствор-расплавным методом