“…It is widely accepted that the expansion of single SSFs under excess carrier injection is driven by a 30 Si(g) glide. [4,6,11,12,14] However, it is not so obvious for SSFs introduced by plastic deformation at elevated temperatures because the results obtained in Ref. [9] allow to imply that the SSF expansion under low energy electron beam irradiation (LEEBI) and by thermal excitation is driven by partial dislocations of different types.…”