Experimental 3C-SiC MOSFET

Kondo, Yasushi; Takahashi, Tetsuo; Ishii, Keisuke; Hayashi, Yutaka; Sakuma, E.; Misawa, S.; Daimon, Hiroshi; Yamanaka, Mitsugu; Yoshida, Sadafumi

doi:10.1109/edl.1986.26417

Cited by 74 publications

(14 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Polysilicon combined with aluminum metallization was used for the source and drain contacts. Considerable leakage current through the p-type layer was evident, as the ID did not saturate even at VD more negative than -12 V. The devices produced by Furukawa et al [134] (and referred to as insulated-gate FET's) were similar to those of Kondo et al [140] except that the final p-layer was doped with B because of the better rectifying characteristics of undopedP3-doped p-n junctions. Depletion character was evident but the devices did not saturate nor could they be turned off.…”

Section: A Beta-silicon Carbide Devicesmentioning

confidence: 97%

See 1 more Smart Citation

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

et al. 1991

View full text Add to dashboard Cite

The unique thermal and electronic properties of silicon carbide provide multiplicative combinations of attributes which lead to one of the highest jigures of merit for any semiconductor material for use in high-power,-speed,-temperature,-frequency and radiation hard applications. Structurally, silicon carbide exists in a host of polyiypes, the origins of which are incompletely understood. The continual development of the deposition of silicon carbide thin films and the associated technologies of impurity incorporation, etching, surface chemistry, and electrical contacts have culminated in a host of solid-state devices including field effect transistors capable of operation to 925 K. The results of these several research programs in the United States, Japan and the Soviet Union, and the remaining challenges related to the development of silicon carbide vis a vis microelectronics are presented and discussed in this review.

show abstract

Section: A Beta-silicon Carbide Devicesmentioning

confidence: 97%

“…Depletion-mode (normally on) MOSFET's have been fabricated by Kondo et al [140], Furukawa et al [134] and Palmour and coworkers [139], [141]. Kondo's team produced their device on an undoped, n-type S i c layer grown on an aluminum-doped, p-type layer previously deposited on a p-type (40-60.cm) silicon substrate.…”

Section: A Beta-silicon Carbide Devicesmentioning

confidence: 99%

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

et al. 1991

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5] The metastable, cubic ␤-SiC polymorph is of particular interest because of the possibility to grow heteroepitaxial films by chemical vapor deposition ͑CVD͒. A suitable substrate is titanium carbide, 1 but because of a lack of large single crystals silicon is more practical.…”

mentioning

confidence: 99%

Heteroepitaxy of β-SiC from methyltrichlorosilane and methyltribromosilane on Si(100) without a carbon buffer layer

Kunstmann

Vepřek

1995

Applied Physics Letters

View full text Add to dashboard Cite

Methyltrichlorosilane and a novel precursor methyltribromosilane have been used for the heteroepitaxial deposition of β-SiC on Si(100) at a relatively low temperature of 1150–1200 °C without any carbon buffer layer. The low deposition temperature and an improved temperature program during the annealing of the substrate for cleaning and subsequent deposition of the film allowed us to prepare β-SiC epitaxial films of high structural quality which is documented by the x-ray diffraction, Raman scattering spectroscopy and scanning electron microscopy.

show abstract

“…SiC metal-oxide-semiconductor field-effect-transistors (MOSFETs) operating at temperatures as high as 650 'C have been reported from several sources [4][5][6][7]. A crucial component of MOSFETs is the MOS capacitor which is used to control the conductivity of the channel between the oppos.tely doped source/drain regions.…”

Section: Introductionmentioning

confidence: 99%

MIS capacitor studies on silicon carbide single crystals:

Kopanski¹

1990

View full text Add to dashboard Cite

In this continuation of previous work, cubic SiC metal-insulatorsemiconductor (MIS) capacitors with thermally grown or chemicalvapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and currentvoltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, Nr; interface trap level density, Dit ; oxide trapped charge, N ot ; and mobile ionic charge, Nm) and to determine the stability of the device properties with electricfield stress and temperature. It was found that an electricfield stress would alter the shape of the SiC MIS capacitor C-V characteristics. A negative voltage stress at room temperature would result in a negative shift of the C-V characteristics, indicating the creation of positive charge in the oxide. A positive voltage stress at room temperature resulted in no detectable shift of the C-V curve. The sense of these shifts in the C-V curves is the same as that observed for the "slow trapping" instability often observed in silicon and other semiconductor-based MIS capacitors. From the shift in the C-V characteristics at the mid-gap point, it was found that a negative voltage stress could increase Not by as much as 5 x 1011 CM-2 . A voltage stress was also found to increase D it by as much as 25%. The mobile ionic charge density was determined from a series of elevat_PA temperature bias stress measurements. N. for the capacitors in this study ranged from less than 1 x 10 11 to 4 x 10 11 cm -2 . It was found that increasing the temperature would also change the shape of the C-V characteristics, indicating an increase in the number of active interface traps_ The resistivity and breakdown field of various insulators on SiC were determined from the I-V characteristics of the capacitors. For capacitors with thermal oxide insulating layers, the average resistivity was about 10 56 O-cm, and the average electri,: breakdown field was 3.3 X 106 V/cm. Fowler-Nordheim tunneling was identified as the charge conduction mechanism of thermal oxide layers on cubic SiC. 7.1ne barrier height between n-type iiC and Si02 for the tunneling of electrons was determined to be 2.9 eV with an electron effective mass of 0.5 by fitting the Fowler-Nordheim formula to the observed I-V curve. Finally, some deep-level transient capacitance measurements were attempted on some of the SiC MIS capacitors and on Au on SiC Schottky diodes. In the conclusions of this report, a comprehensive summary of the electrical properties of cubic SiC MIS capacitors is presented.

show abstract

Experimental 3C-SiC MOSFET

Cited by 74 publications

References 6 publications

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

Heteroepitaxy of β-SiC from methyltrichlorosilane and methyltribromosilane on Si(100) without a carbon buffer layer

MIS capacitor studies on silicon carbide single crystals:

Contact Info

Product

Resources

About