The unique thermal and electronic properties of silicon carbide provide multiplicative combinations of attributes which lead to one of the highest jigures of merit for any semiconductor material for use in high-power,-speed,-temperature,-frequency and radiation hard applications. Structurally, silicon carbide exists in a host of polyiypes, the origins of which are incompletely understood. The continual development of the deposition of silicon carbide thin films and the associated technologies of impurity incorporation, etching, surface chemistry, and electrical contacts have culminated in a host of solid-state devices including field effect transistors capable of operation to 925 K. The results of these several research programs in the United States, Japan and the Soviet Union, and the remaining challenges related to the development of silicon carbide vis a vis microelectronics are presented and discussed in this review.

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The effect of ion-implantation-induced damage on the resistivity of n-type GaN has been investigated. H, He, and N ions were studied. The resistivity as a function of temperature, implant concentration, and post-implant annealing temperature has been examined. Helium implantation produced material with an as-implanted resistivity of 1010 Ω-cm. He-implanted material remained highly resistive after an 800 °C furnace anneal. The damage associated with H implantation had a significant anneal stage at 250 °C and the details of the as-implanted resistivity were sample dependent. N implants had to be annealed at 400 °C to optimize the resulting resistivity but were then thermally stable to over 800 °C. The 300 °C resistivity of thermally stabilized He- and N- implanted layers was 104 Ω-cm, whereas for H-implanted layers the 300 °C resistivity was less than 10 Ω-cm.