H, He, and N implant isolation of n-type GaN

Abstract

The effect of ion-implantation-induced damage on the resistivity of n-type GaN has been investigated. H, He, and N ions were studied. The resistivity as a function of temperature, implant concentration, and post-implant annealing temperature has been examined. Helium implantation produced material with an as-implanted resistivity of 1010 Ω-cm. He-implanted material remained highly resistive after an 800 °C furnace anneal. The damage associated with H implantation had a significant anneal stage at 250 °C and the details of the as-implanted resistivity were sample dependent. N implants had to be annealed at 400 °C to optimize the resulting resistivity but were then thermally stable to over 800 °C. The 300 °C resistivity of thermally stabilized He- and N- implanted layers was 104 Ω-cm, whereas for H-implanted layers the 300 °C resistivity was less than 10 Ω-cm.

Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure

“…Each found that post-implantation annealing activates the dopants, but no estimates of the absolute PL efficiency were given. Recently, the electrical properties [8] [9] and thermal stability [10] [11] [12] of dopant-implanted GaN have received growing attention, highlighted by the demonstration of implant isolation for electronic devices [13] and the electrical activation of p-type Ca acceptors [14].…”

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

“…Implantation isolation have been studied in pure GaN or AlGaN material using H + , He + , N + , F + , Mg + , Ar + , and Zn + ions [2]- [8]. The O + ion implant isolation was also investigated on AlGaAs [9], InAlN [10], and GaN (n-type doping)/GaN materials [11] to study the isolation quality, and P/He, Ar + , and N + ions have been employed in AlGaN/GaN HEMTs [12]- [14].…”

GaN p-n Structures Fabricated by Mg Ion Implantation

“…To date there has been a little work in the area of the device applications https://doi.org/10.1557/S1092578300003367 of ion implantation in GaN, and generally ion implantation has been used to introduce impurities in GaN for study of their optical properties as well as the damage and passivation processes in GaN [10]. Recently, both n-and p-type GaN, as well as semi-insulating (sheet resistance of annealing has been reported [12]. In addition, high-resistivity layers for increasing the Schottky barrier height were created by implantation Mg, Mg/P and Ca into n-GaN with subsequent activation annealing [13].…”