Experimental analysis of current conduction through thermally grown SiO2 on thick epitaxial 4H-SiC employing Poole-Frenkel mechanism

Gupta, Sanjeev K.; Azam, Ameer; Akhtar, Jamil

doi:10.1007/s12043-010-0030-y

Cited by 8 publications

(2 citation statements)

References 10 publications

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“…where E denotes the applied electric field. For insulators such as SiO 2 on SiC, with deep traps, the onset voltage is in the 10 6 V/cm range 37 and hence this mechanism can be excluded here since high currents are transmitted through the film at rather low electric field. Other possibilities involve dispersive transport, observed in the band tails of amorphous Si, 38 nearest neighbor- 39 and variable range hopping.…”

Section: Carrier Transport Across Interphasesmentioning

confidence: 99%

Semiconductor Surface Transformations for Photoelectrochemical Energy Conversion

Lewerenz¹

2014

J. Electrochem. Soc.

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The issue of photoelectrode stability, while simultaneously maintaining efficient operation in aqueous solutions, is addressed for energy converting half cells and complete photoelectrocatalytic structures. The historical development of stability concepts, their realization and recent advances are described. Examples are presented that span the time from the inception of photoelectrochemical energy conversion to present day's renewed interest in storable solar energy. The application of (photo)corrosion processes for in-situ synthesis of protective coatings is described and chemical and electronic analyses of the interphases formed are given. Future development and innovation routes will be discussed. The early days of light-induced processes at the solid-electrolyte interface were characterized by a series of fascinating effects. They encompass fundamental investigations of semiconductor-electrolyte junctions, 1,2 the first light-assisted water splitting, 3 photoemission from metals into solution, 4,5 hot electron processes 6,7 and the first carbon dioxide reduction at illuminated semiconductors. 8,9 The conceptual basis of energy conversion at the solid-liquid junction was provided by Gerischer in 1975 when the rectifying nature of the semiconductor-redox electrolyte contact was outlined.1 The elegance of formation of a conformal contact, simply by immersion of the samples into solution, was, however, neutralized by interfacial reactivity that gives rise to photocorrosion. 10,11 In the early assessment of stability of semiconductors at electrolyte junctions, thermodynamic decomposition potentials were introduced and their energy relation relative to the semiconductor band edges was analyzed.10,12 It soon turned out that stability is a predominant and major issue in photoelectrochemical energy conversion in both the photovoltaic and photoelectrocatalytic modes. Early development of stable photoelectrodes, based on the group VIb transition metal dichalcogenides, [13][14][15] which are also characterized by high absorptivity, was compromised by the problem of scalable preparation of efficient electrodes. Technologically advanced semiconductors from the III-V and II-VI groups typically showed rather high conversion efficiencies [16][17][18] but, also, often pronounced photocorrosion.19 A promising approach for stabilization was developed by the Bell Laboratories group where ∼ 10% efficient InP photocathodes had been operated for extended time in aqueous solution. 20The employed conditioning method resulted in the formation of interfacial films 21 that enabled electron transfer but that blocked access of solution components to the absorber surface thereby suppressing the corrosion reactions.In this text, fundamental aspects and recent developments and advances of this method will be outlined and discussed. Basic concepts on stability and photocorrosion are presented first, followed briefly by a discussion of carrier transport across interfacial films. A subsequent section describes the chronological development of ...

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Section: Carrier Transport Across Interphasesmentioning

confidence: 99%

Semiconductor Surface Transformations for Photoelectrochemical Energy Conversion

Lewerenz¹

2014

J. Electrochem. Soc.

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“…Такой метод может найти применение, например, для повышения точности моделирования радиационной стойкости микросхем [14], оптимизации процесса изготовления структур КНИ, обеспечения применения специальных технологических методов предотвращения образования паразитного канала [15,16], а также отбраковки структур КНИ. В работах [17][18][19] встречаются упоминания о наблюдаемом в диоксиде кремния механизме электропроводности Пула-Френкеля, при котором плотность тока определяется концентрацией и энергетическим положением донорных центров. Эти наблюдения носили случайный характер и не были направлены на прогнозирование радиационно-индуцированного накопления заряда в захороненном оксиде структур КНИ.…”

Section: Introductionunclassified

Эффект Пула--Френкеля И Возможность Его Применения Для Прогнозирования Радиационного Накопления Заряда В Термическом Диоксиде Кремния

Ширяев¹,

Воротынцев²,

Шоболов³

2018

Физика И Техника Полупроводников

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Предложено применить эффект Пула-Френкеля для прогнозирования радиационно-индуцированного накопления заряда в термическом диоксиде кремния. Были рассмотрены различные механизмы электропроводности термического диоксида кремния, определены условия возникновения в нем эффекта Пула-Френкеля и рассчитаны характеристики донорных центров, участвующих в электропроводности Пула-Френкеля. Определен уровень донорных центров с энергией 2.34 эВ ниже дна зоны проводимости и получена концентрация ионизированных донорных центров, равная 1.0 • 10 9 см −3 при температуре 400 K и напряженности поля 10 МВ/см. Сделано заключение, что эффект Пула-Френкеля можно применить не для прогнозирования абсолютного значения радиационно-индуцированного заряда, а для сравнения образцов по способности его накапливать.

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Improved electrical parameters of vacuum annealed Ni/4H-SiC (0001) Schottky barrier diode

Gupta

Azam

Akhtar

2011

Physica B: Condensed Matter

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Experimental analysis of current conduction through thermally grown SiO2 on thick epitaxial 4H-SiC employing Poole-Frenkel mechanism

Cited by 8 publications

References 10 publications

Semiconductor Surface Transformations for Photoelectrochemical Energy Conversion

Semiconductor Surface Transformations for Photoelectrochemical Energy Conversion

Эффект Пула--Френкеля И Возможность Его Применения Для Прогнозирования Радиационного Накопления Заряда В Термическом Диоксиде Кремния

Improved electrical parameters of vacuum annealed Ni/4H-SiC (0001) Schottky barrier diode

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