Experimental and numerical analysis of the indium-content on the internal electromechanical field in GaN-based light-emitting diodes

Usman, Muhammad; Nawaz, Nabila; Saba, Kiran; Karimov, Khasan S.; Muhammad, Nazeer

doi:10.1016/j.ijleo.2018.07.081

Cited by 11 publications

(1 citation statement)

References 43 publications

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“…The W-shape well can utilize the carrier localization within the well to improve the carrier confinement and consequent radiative recombination. Strong band-bending in W-LED is observed because of the increased electrostatic field, owing to the indium fluctuation i.e., 34%-28%-34%, which also hinders carrier transport in the W-LED apart from the indium localization [28,29,31,32,45,47,48]. The influence of the electrostatic field and carrier transport in our proposed device is presented in detail in the following discussion.…”

Section: Resultsmentioning

confidence: 91%

Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode

et al. 2018

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To improve the internal quantum efficiency of green light-emitting diodes, we present the numerical design and analysis of bandgap-engineered W-shaped quantum well. The numerical results suggest significant improvement in the internal quantum efficiency of the proposed W-LED. The improvement is associated with significantly improved hole confinement due to the localization of indium in the active region, leading to improved radiative recombination rate. In addition, the proposed device shows reduced defect-assisted Shockley-Read-Hall (SRH) recombination rate as well as Auger recombination rate. Moreover, the efficiency rolloff in the proposed device is associated with increased built-in electromechanical field.

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