Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate, bottom-contact organic thin-film transistors with Schottky contact

Noda, Kei; Wada, Yasuo; Toyabe, T.

doi:10.1016/j.orgel.2014.10.017

Cited by 9 publications

(10 citation statements)

References 42 publications

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“…The dependence of μ sat on the doping concentration shows a relatively similar trend to that of μ linear , while the saturation mobility becomes somewhat smaller than the linear mobility on the whole. If we can assume that the electron transport in the fabricated PCBM TFT follows the gate-voltage-dependent hopping conduction − and is mainly governed by electron traps in the transistor channel, the electron depletion and concomitant electron detrapping can take place near the drain in the saturation regime (pinch-off phenomenon), which can reduce the electron mobility in the vicinity of the drain. This local charge/mobility distribution in the channel might give rise to smaller mobility values in the saturation regime.…”

Section: Results and Discussionmentioning

confidence: 99%

Characteristic Control of n-Channel Organic Thin-Film Transistors Using a Dimethyl-Substituted Benzimidazole Dopant

Noda

Hiruma

Yoshihashi

et al. 2021

ACS Appl. Electron. Mater.

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4-(N,N-Dimethylamino)phenyl-substituted 1,3-dimethyl-2,3-dihydro-1H-benzimidazole (N-DMBI-H) has been utilized as a solution-processable n-type dopant in organic electronics. In this study, a dimethyl-substituted N-DMBI-H derivative (DMe-N-DMBI-H), in which two methyl groups are attached at the terminal 5- and 6-positions of the benzimidazole moiety of N-DMBI-H molecule, has been examined to control its electron-donating ability. The effectiveness of DMe-N-DMBI-H as a solution-processable donor dopant has been clarified by evaluating electrical characteristics of DMe-N-DMBI-H-doped PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) thin-film transistors, such as field-effect mobility, gate threshold voltage, and contact resistance. Our electrochemical and electrical characterizations as well as quantum chemical calculations have suggested that DMe-N-DMBI-H works as a donor dopant somewhat stronger than N-DMBI-H.

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Section: Results and Discussionmentioning

confidence: 99%

Characteristic Control of n-Channel Organic Thin-Film Transistors Using a Dimethyl-Substituted Benzimidazole Dopant

Noda

Hiruma

Yoshihashi

et al. 2021

ACS Appl. Electron. Mater.

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“…We explain Thin-film Organic Transistor Advanced Simulator (TOTAS) [15][16][17][18] continuity (E is the electric field, ρ is the charge density, and the recombination ratio is assumed to be zero).…”

Section: Simulatormentioning

confidence: 99%

“…As a carrier injection model considering a Schottky barrier on an electrode/semiconductor interface, thermionic field emission (TFE) and thermionic emission (TE) are applied on source and drain electrodes, respectively [18]. It is noted that a semiconductor layer is treated as p-type one in this study, but TOTAS can also apply to n-type one.…”

Section: Simulatormentioning

confidence: 99%

“…We explain Thin-film Organic Transistor Advanced Simulator (TOTAS) [15][16][17][18] used to simulate devices. TOTAS can calculate current-voltage characteristics and potential distributions of OTFTs by numerically solving the following Poisson's equation and equation of current continuity (E is the electric field, ρ is the charge density, and the recombination ratio is assumed to be zero).…”

Section: Simulatormentioning

confidence: 99%

“…It is noted that a semiconductor layer is treated as p-type one in this study, but TOTAS can also apply to n-type one. As a carrier injection model considering a Schottky barrier on an electrode/semiconductor interface, thermionic field emission (TFE) and thermionic emission (TE) are applied on source and drain electrodes, respectively [18]. A device structure utilized for the simulation in this study is according to the structure without contact dope layer as shown in Fig.…”

Section: Simulatormentioning

confidence: 99%

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Experimental and Numerical Investigation of Contact Doping Effects in Dinaphthothienothiphene Thin‐Film Transistors

Yamamoto

Noda²,

Wada

et al. 2017

Elect Comm in Japan

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Contact doping effects in p-channel dinaphthothienothiphene (DNTT) thin-film transistors with a bottomgate, top-contact configuration were investigated with both experimental and numerical approach. Characteristic variation in transistor parameters such as the gate threshold voltage and the field-effect mobility for devices with various channel lengths was suppressed by the contact doping with tetrafluorotetracyanoquinodimethane (F 4 TCNQ) as an acceptor dopant. The gate-voltage dependence of contact resistance and channel resistance was also evaluated separately to examine the contact doping effect in detail. In addition, device simulation considering a Schottky barrier at a metal/semiconductor interface successfully reproduced the experimental current-voltage characteristics by using a hole concentration of the active DNTT layer in the order of 10 17 cm −3 , which was estimated by capacitancevoltage measurement for a metal/insulator/semiconductor capacitor structure. This study suggests the importance of establishing both the carrier doping and carrier concentration measurements toward realizing practical applications of organic transistors. C⃝

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Improving the Charge Injection in Organic Transistors by Covalently Linked Graphene Oxide/Metal Electrodes

Chen

Zhang

et al. 2016

Adv Elect Materials

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Electrodes, one of the key components of organic field‐effect transistors (OFETs), exert great influence on the device performance as well as circuit fabrication. Conventional metal electrodes generally show poor contact quality with organic semiconductors, especially in bottom‐contact geometry. Development of appropriate modification materials and methods for metal electrodes is an efficient way to improve OFET performance, which is, however, quite a challenging task. In this work, a facile strategy is developed to modify the metal surface with graphene oxide (GO) via covalent bonds for application in OFETs, which has not been reported before. This selective covalent modification strategy is compatible with diverse patterning techniques, and the covalently linked GO‐Au electrode exhibits strong robustness against solvent treatment. Remarkably, the GO‐Au electrode shows very good generality with both p‐type and n‐type organic semiconductors, which contributes to the realization of p‐/n‐type OFETs with significantly improved performance compared with the pristine Au electrode. The facile and low temperature modification method, compatibility with diverse patterning techniques, robustness against solvent treatment, good generality with organic semiconductors, and high OFET performance enable the strategy to be very promising for application in the field of organic electronics.

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Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate, bottom-contact organic thin-film transistors with Schottky contact

Cited by 9 publications

References 42 publications

Characteristic Control of n-Channel Organic Thin-Film Transistors Using a Dimethyl-Substituted Benzimidazole Dopant

Characteristic Control of n-Channel Organic Thin-Film Transistors Using a Dimethyl-Substituted Benzimidazole Dopant

Experimental and Numerical Investigation of Contact Doping Effects in Dinaphthothienothiphene Thin‐Film Transistors

Improving the Charge Injection in Organic Transistors by Covalently Linked Graphene Oxide/Metal Electrodes

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