2015
DOI: 10.1109/led.2015.2404138
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Experimental and Simulation Results of Magnetic Modulation of Gate Oxide Tunneling Current in Nanoscaled MOS Transistors

Abstract: An experimental-simulation methodology to explore the spatially nonhomogeneous properties of the tunneling current in nanoscaled MOSFET is introduced. The magnetic field B is introduced into the Schrödinger-Poisson system, which allows simulating the effect of the B field on the gate oxide tunneling current and be compared with experimental data. We found out that sweeping the B field from negative to positive values is equivalent to scan or map the tunneling mechanism along the channel from source to drain. T… Show more

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