Abstract:The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation. The variation of oxide-trapped charge (N ot ) and interface-trap charge (N it ) with the total dose has also been investigated. A two-dimensional analytical model of threshold voltage (V th ) has been developed with the degradation due to the total dose irradiation taken into consideration. Based on this model, numerical simulation has been carried out by Matlab, and the influence of the total dose, geometry and physics parameters on threshold voltage (V th ) were simulated. In addition, to evaluate the validity of the model, the simulation results were compared with experimental data, and good agreements were confirmed. Thus, the proposed model provides good reference for research on irradiation reliability and application of strained integrated circuit of uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor.

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An analytical model of channel current for the uniaxial strained Si nanometer NMOSFET has been developed with the degradation due to total dose irradiation taken into consideration. Based on this model, the numerical simulation has been carried out by Matlab, and the influence of the total dose on channel current was simulated. Furthermore, to evaluate the validity of the model, the simulation results were compared with experimental data, and good agreements were confirmed. Thus, the proposed model provides good reference for research on irradiation reliability of uniaxial strained Si nanometer NMOSFET.