Total ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET

Hao, Minru; Hu, Huiyong; Liao, Chenguang; Kang, Haiyan; Su, Housheng; Zhang, Qian; Zhao, Yingbo

doi:10.1587/elex.14.20170411

Cited by 3 publications

(3 citation statements)

References 15 publications

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“…The threshold voltage model of the uniaxial strained Si nanometer NMOSFET devices after considering the quantum effect and total dose radiation effect is calculated by [7]: where L, l and W d are channel length, characteristics scaling length and the maximum width of the depletion-layer, respectively. V FB,ssi , V DIBL , th,si , th,ssi , N a , V ds and " si are flat band voltage, drain-induced barrier lowering, threshold surface potential of relaxation and strained silicon, doping concentration in the channel, drain voltage and dielectric constant of silicon, respectively.…”

Section: Channel Current Modelmentioning

confidence: 99%

Effects of gamma-ray radiation on channel current of the uniaxial strained Si nano-scale NMOSFET

Hao¹,

Hu²,

Liao³

et al. 2017

IEICE Electron. Express

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An analytical model of channel current for the uniaxial strained Si nanometer NMOSFET has been developed with the degradation due to total dose irradiation taken into consideration. Based on this model, the numerical simulation has been carried out by Matlab, and the influence of the total dose on channel current was simulated. Furthermore, to evaluate the validity of the model, the simulation results were compared with experimental data, and good agreements were confirmed. Thus, the proposed model provides good reference for research on irradiation reliability of uniaxial strained Si nanometer NMOSFET.

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Section: Channel Current Modelmentioning

confidence: 99%

Effects of gamma-ray radiation on channel current of the uniaxial strained Si nano-scale NMOSFET

Hao¹,

Hu²,

Liao³

et al. 2017

IEICE Electron. Express

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“…[15]- [17]. Designing and modelling on the basis of silicon of the radiation-resistant pressure sensors, which are used in the aerospace, rocket and space industries, thermonuclear and nuclear energy [18]- [20], and of the strained heterostructures, which can be applied in the fields of high radiation [21]- [23], require the detailed research of the impact of radiation irradiation and deformation on the electrical properties of silicon. In most of the works, only the effect of radiation or deformation on the physical properties of silicon single crystals has been considered.…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Luniov

Lyshuk

Maslyuk

et al. 2019

Latvian Journal of Physics and Technical Sciences

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Temperature dependencies for Hall mobility of electrons for the uniaxially deformed n-Si single crystals, irradiated by the flow of electrons Ω=1·1017 el./cm2 with the energy of 12 MeV, are obtained on the basis of piezo-Hall effect measurements. From the analysis of these dependencies it follows that under the uniaxial pressure (0–0.42) GPa and (0–0.37) GPa along crystallographic directions [100] and [111], respectively, the deformation-induced increase of the Hall mobility has been observed. On the basis of the proposed theoretical model of mobility, this increase is explained by the decrease of the amplitude of a large-scale potential with an increase in the magnitude of uniaxial deformation and, accordingly, the probability of electron scattering on this potential. The slight discrepancy between the obtained experimental results and the relevant theoretical calculations at the low temperatures is due to the fact that the electron scattering on the radiation defects, created by the electron radiation, was not taken into account in the calculations. The decrease in Hall mobility of electrons along with an increase in temperature for unirradiated and irradiated silicon single crystals is explained by the growth of the probability of electron scattering on the optical phonons that are responsible for the intervalley scattering in silicon. The obtained results can be used in designing and modelling on the basis of n-Si single crystals of various electronic devices of micro- and nanoelectronics, which can be subject to the extreme conditions of action of the significant radiation and deformation fields.

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“…The application of Buck in space has to consider all kinds of radiation effect. For CMOS devices, total ionizing dose (TID) effect is prone to occur in the radiation environment, and it will lead to threshold voltage shift [1,2], transconductance degradation [3,4], carrier mobility reduction and leakage current [5,6,7,8], resulting in the degradation or failure of devices and circuits [9,10,11,12,13,14,15]. In this aspect, it is of great significance to research on the radiation-resistant reinforcement of Buck.…”

Section: Introductionmentioning

confidence: 99%

A radiation-hardened Buck converter

Yang

Luo

et al. 2019

IEICE Electron. Express

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Buck converter is widely used in the aerospace field. However, radiation in the aerospace environment will result in degradation or failure of devices and circuits. This paper presents a radiation-hard Buck, which is an adaptive on-time Buck. A radiation-hard adaptive on-time generator is proposed by utilizing of leakage current compensation. The proposed radiation-hard adaptive on-time generator is composed of an adaptive ontime timing block and a charging current generator. Finally, the proposed Buck is fabricated in a standard 0.18 µm BCD process. And the radiation tests show that the Buck still maintains stability after total ionizing dose irradiation at a total dose of 350 Krad (Si).

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Total ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET

Cited by 3 publications

References 15 publications

Effects of gamma-ray radiation on channel current of the uniaxial strained Si nano-scale NMOSFET

Effects of gamma-ray radiation on channel current of the uniaxial strained Si nano-scale NMOSFET

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

A radiation-hardened Buck converter

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