Experimental and simulation studies of the channeling phenomena for high energy implantation

Guo, B. N.; Variam, N.; Jeong, U.; Mehta, S.; Posselt, M.; Лебедев, А. А.

doi:10.1109/iit.2002.1257956

Cited by 9 publications

(6 citation statements)

References 6 publications

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“…For P, 270keV, accumulated dose leads to less channeled profiles and damage-induced effects are observed for implanted dose above 1e13/cm 2 . As previous data shown with implants P 800keV, 0° tilt at various doses [7], the damage below dose of 1e13/cm 2 for P implant between 270 to 800keV is not significant. Damage effects on SIMS profiles should be considered for P implants with dose above 1e13/cm 2 .…”

Section: Resultssupporting

confidence: 77%

“…In an earlier paper, authors discussed briefly the dependence of channeling in the areas of the acceptance angle and incident angle, dopant species, energy, dose and extent of damage induced in the crystal [7]. It was demonstrated that ThermaWave (TW) and Secondary Ion Mass Spectrometry (SIMS) results could be used to align the wafer relative to the incident beam to achieve perfectly channeled dopant profiles.…”

Section: Introductionmentioning

confidence: 99%

“…It was demonstrated that ThermaWave (TW) and Secondary Ion Mass Spectrometry (SIMS) results could be used to align the wafer relative to the incident beam to achieve perfectly channeled dopant profiles. Small beam incident deviation from the wafer normal will lead to observable differences in SIMS dopant profiles and such differences cannot be fully compensated with thermal dopant activation process, typical of advanced CMOS fabrication [7].…”

Section: Introductionmentioning

confidence: 99%

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Channeling Doping Profiles Studies for Small Incident Angle Implantation into Silicon Wafers

Guo¹,

Variam²,

Jeong³

et al. 2003

AIP Conference Proceedings

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Traditional de-channeling dopant profiles in the silicon crystal wafers have been achieved by tilting the wafer away from the incident beam. As feature sizes of device shrink, the advantages for channeled doping profiles for implants with small or near zero degree incident angles are being recognized. For example, high-energy CMOS well spacing limitations caused by shadowing and encroachment of the ion beam by photoresist mask can be avoided for near zero degree incident implants. Accurate models of channeled profiles are essential to predict the device performance. This paper mainly discusses the damage effect on channeled dopant profiles. Especially, damage effects on channeled dopant profiles are correlated to ThermaWave (TW) measurements. It is demonstrated that there is a critical dose at which the damage effects have to be considered for channeled dopant profile evolvements. EXPERIMENTAL DETAILS All SIMS samples are 200mm wafers with only native oxide as the top-layer. Wafers are implanted on VIISta 810 medium-current ion implanter. In the

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Section: Resultssupporting

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Channeling Doping Profiles Studies for Small Incident Angle Implantation into Silicon Wafers

Guo¹,

Variam²,

Jeong³

et al. 2003

AIP Conference Proceedings

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“…To validate our models, a large array of experimental and simulation data available in publications [32][33][34][35][36][37][38][39][40] has been used. Their model description was carried out by means of the LevenbergMarquardt method of NLSq fitting.…”

Section: Model Validationmentioning

confidence: 99%

“…Experimental SIMS data picked up from various sources [32][33][34][35][36][37][38] were fitted using both the 8-parameter model developed in section 4, and the standard 9-parameter "dual Pearson" model. It is clear that both models are qualitatively applicable to fit all the data.…”

Section: Energy Dependence Of Ion Rangesmentioning

confidence: 99%

Enhanced phenomenological models of ion channeling contribution to doping profiles in crystals

Bratchenko¹,

Dyuldya²,

Bakai³

2009

Condens. Matter Phys.

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New phenomenological models are proposed to describe the effect of an ordered lattice structure of crystalline targets on the as-implanted doping profiles of low-energy heavy ions. The models account for the channeling kinetics and clarify the effect of bi-directional transitions of ions between random-like and channeled modes of motion on the target depth dependencies of dopant concentration. They also incorporate a simple model of the target radiation damaging effect on doping profiles. The presented results of model validation against the experimental and Monte Carlo computer simulation data and the comparative analysis of the capabilities of the proposed and the existing models show that the application of a more physically grounded approach allows us to improve the quality of doping profile description. The theoretical models developed are useful for obtaining physical parameters of low-energy ion channeling kinetics from the experimental data.

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Characterization and simulation studies on high tilt ion implantation for precision halo implant applications

Guo¹,

Zhao²,

Falk³

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

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Experimental and simulation studies of the channeling phenomena for high energy implantation

Cited by 9 publications

References 6 publications

Channeling Doping Profiles Studies for Small Incident Angle Implantation into Silicon Wafers

Channeling Doping Profiles Studies for Small Incident Angle Implantation into Silicon Wafers

Enhanced phenomenological models of ion channeling contribution to doping profiles in crystals

Characterization and simulation studies on high tilt ion implantation for precision halo implant applications

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