Experimental and theoretical investigation of the &amp;#x2018;apparent&amp;#x2019; mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance

Rideau, D.; Monsieur, F.; Nier, O.; Niquet, Yann-Michel; Lacord, J.; Quenette, V.; Mugny, Gabriel; Hiblot, Gaspard; Gouget, Gilles; Quoirin, M.; Silvestri, Luca; Nallet, F.; Tavernier, C.; Jaouen, H.

doi:10.1109/sispad.2014.6931573

Cited by 7 publications

(8 citation statements)

References 7 publications

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“…As the conductivity is proportional to the carrier density in the simplest Drude model, this trend suggests that the contact resistance is dominated by the near channel (spacers) region. 57 This will be confirmed by a quasiFermi level analysis in the next section.…”

Section: Methodssupporting

confidence: 64%

“…The contact resistance is, therefore, indeed dominated by the spacers. 57 The mobility also compares well with that extracted from the R(L) data on "homogeneous" nanowire channels without spacers and bulk source/drain contacts (the gate then runs across the whole simulation box -see Ref. 10).…”

supporting

confidence: 57%

“…As a consequence, the resistance of the spacers has a near ∝ 1/V gt dependence, which, if not properly accounted for, can partly explain the apparent dependence of the channel mobility on length in short devices. 57,70,71 We have investigated the impact of the channel width W and height H, and the impact of the source/drain doping profiles on the device performances. The contact resistance R c is more dependent on the cross sectional area S = W H of the spacers than on the effective width W eff = W + 2H of the channel.…”

Section: Discussionmentioning

confidence: 99%

“…Such a V −β gt behavior, if not properly accounted for in compact models for the transistors, can strengthen the dependence of the mobility on gate length in short channels. 57,70,71 …”

Section: Comparison With Experimental Datamentioning

confidence: 99%

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Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach

Bourdet

Pelloux-Prayer

et al. 2016

Journal of Applied Physics

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We compute the contact resistances R c in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that R c represents a significant part of the total resistance of devices with sub-30 nm gate lengths. The analysis of the quasi-Fermi level profile reveals that the spacers between the heavily doped source/drain and the gate are major contributors to the contact resistance. The conductance is indeed limited by the poor electrostatic control over the carrier density under the spacers. We then disentangle the ballistic and diffusive components of R c , and analyze the impact of different design parameters (cross section and doping profile in the contacts) on the electrical performances of the devices. The contact resistance and variability rapidly increase when the cross sectional area of the channel goes below 50 nm 2 . We also highlight the role of the charges trapped at the interface between silicon and the spacer material.

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Section: Methodssupporting

confidence: 64%

supporting

confidence: 57%

Section: Discussionmentioning

confidence: 99%

“…Such a V −β gt behavior, if not properly accounted for in compact models for the transistors, can strengthen the dependence of the mobility on gate length in short channels. 57,70,71 …”

Section: Comparison With Experimental Datamentioning

confidence: 99%

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Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach

Bourdet

Pelloux-Prayer

et al. 2016

Journal of Applied Physics

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“…As reported in [22] the total device resistance includes a quantum resistance, due to the finite number of available subbands [24]. This quantum resistance exhibits a 1/V G dependence, and is of the order of 10-20 Ω.V.μm [23] leading to about 10% decrease of linear current in typical 14nm-like devices.…”

Section: A Quantum Resistancementioning

confidence: 84%

TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment

Tavernier

Pereira

Nier

et al. 2015

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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This paper reviews the main challenges for the TCAD of 14nm Fully-Depleted Silicon-On-Insulator (FDSOI) technology performance assessment. Thanks to a multi-scale approach combining extensive electrical characterization and advanced solvers simulations, ensuring deep physical insight, we provide TCAD simulation framework for device layout optimization, strain engineering and device reliability assessment.

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Planar MOSFETs and Their Application to IC Design

Ghouli

Rideau²

2022

Springer Handbook of Semiconductor Devices

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Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance

Cited by 7 publications

References 7 publications

Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach

Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach

TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment

Planar MOSFETs and Their Application to IC Design

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