2016
DOI: 10.1088/0957-4484/27/45/455703
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Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiNx: role of chlorine in plasma enhanced chemical vapour deposition

Abstract: Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from a technological and application point of view. Thus, being able to synthesize them in situ during the matrix growth process is technologically advantageous. The use of SiHCl as the silicon precursor in the plasma enhanced chemical vapour deposition (PECVD) process allows us to obtain Si-QDs without post-thermal annealing. Foremost in this work, is a theoretical rationalization of the mechanism responsible for Si-QD generation in a… Show more

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Cited by 16 publications
(13 citation statements)
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“…The silicon and oxygen precursors were SiH 4 (5%) and N 2 O, respectively. For comparison, we choose N 2 [9], [10] and NH 3 [11], [12] as nitrogen precursor, respectively. Initially, the single SiN x and SiO 2 layers were deposited respectively at the reactor to calibrate the growth rate and optical constants about refractive index (n) and extinction coefficient (k).…”
Section: Methodsmentioning
confidence: 99%
“…The silicon and oxygen precursors were SiH 4 (5%) and N 2 O, respectively. For comparison, we choose N 2 [9], [10] and NH 3 [11], [12] as nitrogen precursor, respectively. Initially, the single SiN x and SiO 2 layers were deposited respectively at the reactor to calibrate the growth rate and optical constants about refractive index (n) and extinction coefficient (k).…”
Section: Methodsmentioning
confidence: 99%
“…The hydrogen from the precursor helps to extract the Cl from the thin‐film surface, thus forming an HCl bond. [ 24 ] These reaction changes could be either exothermic or endothermic in nature. On the other hand, the probability that atomic hydrogen breaks the weaker bonds from the thin film, either on the surface or in bulk, is very high.…”
Section: Emission Mechanisms Of Si Nanostructures In the Nitride‐rela...mentioning
confidence: 99%
“…The most probable bonds to be broken during the reaction process are SiH, NH, and SiSi. [ 24 ] In this way, the SiH and SiSi breaking bonds help in the formation of reaction centers for growth enhancement of Si NPs and QDs inside the SiNx matrix, whereas dissociation of the NH bond endorses the matrix growth, favoring insertion of the silylene species (exothermic reactions) which can increase the average size of Si NPs and QDs. According to the theoretical calculations obtained in this report, in all cases, the insertion of silylene species on the SiCl and SiH bonds generated crystalline zones in the nitride matrix producing many SiSi bonds.…”
Section: Emission Mechanisms Of Si Nanostructures In the Nitride‐rela...mentioning
confidence: 99%
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