Experimental approach for feasibility of superlattice FETs

InGaAs/AlAs triple-barrier p–i–n junction diode for realizing superlattice-based FET for steep slope

“…Recently, a superlattice FET (SLFET) has been proposed because the tail of the thermal distribution can be eliminated by the superlattice. [5][6][7][8][9][10] In an SLFET, the filtering of the tail is carried out by the minigap in the conduction band. The SLFET is expected to supply an on-current higher than that supplied by a TFET because the current path has no band-toband tunneling.…”

“…The first method suggests doping into the superlattice. [5][6][7][8][9] This structure makes it difficult to maintain the coherency of electrons in the superlattice. In our former trial, we fabricated an FET with 10 pairs of InGaAs=InP superlattices, 9) but current modulation by the superlattice was not confirmed, although transistor action was confirmed.…”

“…[5][6][7][8][9] This structure makes it difficult to maintain the coherency of electrons in the superlattice. In our former trial, we fabricated an FET with 10 pairs of InGaAs=InP superlattices, 9) but current modulation by the superlattice was not confirmed, although transistor action was confirmed. The second method includes the introduction of another pair of electrodes on the side of the superlattice to induce charge.…”